| Literature DB >> 29932675 |
Kyung Yong Ko1, Kyunam Park1, Sangyoon Lee1, Youngjun Kim1, Whang Je Woo1, Donghyun Kim1, Jeong-Gyu Song1, Jusang Park1, Hyungjun Kim1.
Abstract
Semiconducting two-dimensional transition-metal dichalcogenides are considered promising gas-sensing materials because of their large surface-to-volume ratio, excellent electrical conductivity, and susceptible surfaces. However, enhancement of the recovery performance has not yet been intensively explored. In this study, a large-area uniform WSe2 is synthesized for use in a high-performance semiconductor gas sensor. At room temperature, the WSe2 gas sensor shows a significantly high response (4140%) to NO2 compared to the use of NH3, CO2, and acetone. This paper demonstrates improved recovery of the WSe2 gas sensor's NO2-sensing performance by utilizing external thermal energy. In addition, a novel strategy for improving the recovery of the WSe2 gas sensor is realized by reacting NH3 and adsorbed NO2 on the surface of WSe2: the NO2 molecules are spontaneously desorbed, and the recovery time is dramatically decreased (85 min → 43 s). It is expected that the fast recovery of the WSe2 gas sensor achieved here will be used to develop an environmental monitoring system platform.Entities:
Keywords: atomic layer deposition; gas sensor; recovery improvement; room-temperature operating; selective catalytic reduction; transition-metal dichalcogenide; tungsten diselenide
Year: 2018 PMID: 29932675 DOI: 10.1021/acsami.8b07034
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229