| Literature DB >> 29931713 |
Xiao Wang1, Caihua Wan1, Wenjie Kong1, Xuan Zhang1, Yaowen Xing1, Chi Fang1, Bingshan Tao1, Wenlong Yang1, Li Huang1, Hao Wu1, Muhammad Irfan1, Xiufeng Han1.
Abstract
Spin-orbit torque (SOT)-induced magnetization switching exhibits chirality (clockwise or counterclockwise), which offers the prospect of programmable spin-logic devices integrating nonvolatile spintronic memory cells with logic functions. Chirality is usually fixed by an applied or effective magnetic field in reported studies. Herein, utilizing an in-plane magnetic layer that is also switchable by SOT, the chirality of a perpendicular magnetic layer that is exchange-coupled with the in-plane layer can be reversed in a purely electrical way. In a single Hall bar device designed from this multilayer structure, three logic gates including AND, NAND, and NOT are reconfigured, which opens a gateway toward practical programmable spin-logic devices.Entities:
Keywords: interlayer exchange coupling; spin logic; spin-orbit torques; switching modes
Year: 2018 PMID: 29931713 DOI: 10.1002/adma.201801318
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849