Literature DB >> 29915424

Monatomic phase change memory.

Martin Salinga1,2, Benedikt Kersting3,4, Ider Ronneberger3,4, Vara Prasad Jonnalagadda3, Xuan Thang Vu4, Manuel Le Gallo3, Iason Giannopoulos3, Oana Cojocaru-Mirédin4, Riccardo Mazzarello4, Abu Sebastian5.   

Abstract

Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way1-3, with potential for neuromorphic computing applications4-6. However, its future impact in electronics depends crucially on how the materials at the core of this technology adapt to the requirements arising from continued scaling towards higher device densities. A common strategy to fine-tune the properties of phase change memory materials, reaching reasonable thermal stability in optical data storage, relies on mixing precise amounts of different dopants, resulting often in quaternary or even more complicated compounds6-8. Here we show how the simplest material imaginable, a single element (in this case, antimony), can become a valid alternative when confined in extremely small volumes. This compositional simplification eliminates problems related to unwanted deviations from the optimized stoichiometry in the switching volume, which become increasingly pressing when devices are aggressively miniaturized9,10. Removing compositional optimization issues may allow one to capitalize on nanosize effects in information storage.

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Year:  2018        PMID: 29915424     DOI: 10.1038/s41563-018-0110-9

Source DB:  PubMed          Journal:  Nat Mater        ISSN: 1476-1122            Impact factor:   43.841


  8 in total

1.  Structural Assessment of Interfaces in Projected Phase-Change Memory.

Authors:  Valeria Bragaglia; Vara Prasad Jonnalagadda; Marilyne Sousa; Syed Ghazi Sarwat; Benedikt Kersting; Abu Sebastian
Journal:  Nanomaterials (Basel)       Date:  2022-05-17       Impact factor: 5.719

2.  Exploiting nanoscale effects in phase change memories.

Authors:  Benedikt Kersting; Martin Salinga
Journal:  Faraday Discuss       Date:  2019-02-18       Impact factor: 4.008

3.  State dependence and temporal evolution of resistance in projected phase change memory.

Authors:  Benedikt Kersting; Vladimir Ovuka; Vara Prasad Jonnalagadda; Marilyne Sousa; Valeria Bragaglia; Syed Ghazi Sarwat; Manuel Le Gallo; Martin Salinga; Abu Sebastian
Journal:  Sci Rep       Date:  2020-05-19       Impact factor: 4.379

4.  Thickness-Dependent Crystallization of Ultrathin Antimony Thin Films for Monatomic Multilevel Reflectance and Phase Change Memory Designs.

Authors:  Daniel T Yimam; Bart J Kooi
Journal:  ACS Appl Mater Interfaces       Date:  2022-03-10       Impact factor: 9.229

5.  Designing Conductive-Bridge Phase-Change Memory to Enable Ultralow Programming Power.

Authors:  Zhe Yang; Bowen Li; Jiang-Jing Wang; Xu-Dong Wang; Meng Xu; Hao Tong; Xiaomin Cheng; Lu Lu; Chunlin Jia; Ming Xu; Xiangshui Miao; Wei Zhang; En Ma
Journal:  Adv Sci (Weinh)       Date:  2022-01-14       Impact factor: 16.806

6.  Antimony as a Programmable Element in Integrated Nanophotonics.

Authors:  Samarth Aggarwal; Tara Milne; Nikolaos Farmakidis; Johannes Feldmann; Xuan Li; Yu Shu; Zengguang Cheng; Martin Salinga; Wolfram Hp Pernice; Harish Bhaskaran
Journal:  Nano Lett       Date:  2022-04-22       Impact factor: 12.262

Review 7.  Phase change thin films for non-volatile memory applications.

Authors:  A Lotnyk; M Behrens; B Rauschenbach
Journal:  Nanoscale Adv       Date:  2019-09-18

8.  Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3.

Authors:  Xue-Peng Wang; Xian-Bin Li; Nian-Ke Chen; Bin Chen; Feng Rao; Shengbai Zhang
Journal:  Adv Sci (Weinh)       Date:  2021-05-14       Impact factor: 16.806

  8 in total

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