Literature DB >> 29876424

Structural and morphological data of RF-Sputtered BiVO4 thin films.

R Venkatesan1,2, S Velumani1, K Ordon2,3, M Makowska-Janusik3, G Corbel2, A Kassiba2.   

Abstract

Structural and morphological modulation of rf-sputtered BiVO4 thin films deposited using mechanochemical synthesis prepared BiVO4 nano-powders as sintered target are included in this data article. The crystalline nature of as-prepared films, namely amorphous and crystalline was acquired with time and temperature dependent in-situ high temperature X-ray diffraction (HT-XRD), at a time interval of 1 h. Typical Fourier transform infrared (FT-IR) spectra of annealed thin film of monoclinic BiVO4 structure is given. Furthermore, correlation between morphologies of various substrate temperature fabricated BiVO4 thin films are presented.

Entities:  

Year:  2018        PMID: 29876424      PMCID: PMC5988375          DOI: 10.1016/j.dib.2018.01.070

Source DB:  PubMed          Journal:  Data Brief        ISSN: 2352-3409


Specifications Table Value of the data Combination methods (mechanochemical and rf-sputtering) can be used to for thin film preparations. Similar experimental parameters were adopted to prepare BiVO4 thin films on silicon, borosilicate and glass substrate using rf-sputtering and HT-XRD data presented in Fig. S1 provide the formation of visible active narrow band gap (2.4 eV) monoclinic BiVO4 structure on glass and silicon substrate. The FE-SEM images provide a useful point that by changing substrate temperature one can tune the morphology of BiVO4 thin films for desired applications. The data is useful to design for structural and morphological dependent device application, including photocatalysis, photo-electrochemical, solar cell, transparent semiconductor fabrications.

Data

Pristine BiVO4 was coated on silicon, borosilicate and glass substrates at various substrate temperature under inert (argon) atmosphere by rf-sputtering method with 50 W power onto a 3.3 cm BiVO4 target diameter (mechanochemically prepared [1]). X-ray diffraction characterization was applied to clarify the crystalline nature of the as-deposited films. In-situ HT-XRD thermal treatment was applied to ensure the formation of monoclinic crystalline phase of BiVO4. So, the data set used in this data in brief article contains the structural (HT-XRD and FT-IR) data of the room temperature sputtered BiVO4 films along with morphological features of various substrate temperature deposited films. Furthermore, the data furnished here are based on the additional experimental observation reported in our recent paper [2]. Graph on the chemical composition, structural changes and characteristics of BiVO4 thin films are presented in Fig. S1. HT-X-ray diffraction patterns indicates that the as-deposited films are amorphous in nature at room temperature. The order of the crystallinity increases from amorphous to monoclinic phases of BiVO4 with increasing the heating temperature (from RT to 410 °C). Typical monoclinic crystalline nature of BiVO4 are generated for thin film deposited on Si substrate at room temperature and annealed at 400 °C (Fig. S2). Fig. S3 provides the morphological comparison of room temperature deposited films on glass and silicon substrates. Also, images showing the effect of substrate temperature on surface morphology of BiVO4 films deposited on Si substrate was gathered and depicted in Fig. S4.

Experimental design, materials, and methods

The crystalline structure of the as-deposited thin films was characterized by PANalytical X-ray diffractometer with Cu Kα radiation (λ = 0.15406 nm) equipped with the X’celerator detector and a HTK 1200 Anton Paar chamber. FT-IR measurements were performed by Nicolet 510 spectrometer. Field emission scanning electron microscopy (FE-SEM) was conducted using Carl Zeiss Auriga 60, nanotechnology system equipped with an energy dispersive spectrometer at an accelerating voltage of 2 kV.
Subject areaPhysics, Material science, Chemistry, Physical chemistry
More specific subject areaMaterials physics, photocatalysis.
Type of dataGraphs (HT-XRD and FT-IR) and images (FE-SEM).
How data was acquiredPANalytical X-ray diffractometer (HT-XRD), Nicolet (Thermo scientific) 510 FT-IR spectrometer, Carl Zeiss Auriga FE-SEM.
Data formatAnalyzed.
Experimental factorsIn-situ HT-XRD investigations under air atmosphere at variable temperatures.
Experimental featuresFormation of visible light active monoclinic phase of BiVO4is realized.
Variations with substrate temperature show the notable changes in surface morphology.
Data source locationUniversite du Maine, Le Mans, France. Cinvestav-IPN, Mexico D.F.
Data accessibilityThe data are provided with this article.
  1 in total

1.  Investigations of the charge transfer phenomenon at the hybrid dye/BiVO4 interface under visible radiation.

Authors:  K Ordon; S Coste; O Noel; A El-Ghayoury; A Ayadi; A Kassiba; M Makowska-Janusik
Journal:  RSC Adv       Date:  2019-09-27       Impact factor: 4.036

  1 in total

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