| Literature DB >> 29787241 |
Bo Ram Lee1,2, Jae Choul Yu3, Jong Hyun Park3, Seungjin Lee3, Cheng-Kang Mai4, Baodan Zhao2, Matthew S Wong4, Eui Dae Jung3, Yun Seok Nam3, Song Yi Park5, Daniele Di Nuzzo2, Jin Young Kim5, Samuel D Stranks2, Guillermo C Bazan4, Hyosung Choi6, Myoung Hoon Song3, Richard H Friend2.
Abstract
Perovskite-based optoelectronic devices have been rapidly developing in the past 5 years. Since the first report, the external quantum efficiency (EQE) of perovskite light-emitting diodes (PeLEDs) has increased rapidly through the control of morphology and structure from 0.1% to more than 11%. Here, we report the use of various conjugated polyelectrolytes (CPEs) as the hole injection layer in PeLEDs. In particular, we find that poly[2,6-(4,4-bis-potassium butanylsulfonate)-4 H-cyclopenta-[2,1- b;3,4- b']-dithiophene)] (PCPDT-K) transfers holes effectively, blocks electron transport from the perovskite to the underlying ITO layer, and reduces luminescence quenching at the perovskite/PCPDT-K interface. Our optimized PeLEDs with PCPDT-K show enhanced EQE by a factor of approximately 4 compared to control PeLEDs with PEDOT:PSS, reaching EQE values of 5.66%, and exhibit improved device stability.Entities:
Keywords: LEDs; PEDOT:PSS; conjugated polyelectrolytes (CPEs); electroluminescence; hole transport layer (HTL); lead halide perovskites; perovskite light-emitting diodes (PeLEDs)
Year: 2018 PMID： 29787241 DOI： 10.1021/acsnano.8b01715
Source DB: PubMed Journal: ACS Nano ISSN： 1936-0851 Impact factor: 15.881