Literature DB >> 29775490

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

Han Eol Lee1, JeHyuk Choi2, Seung Hyun Lee1, Minju Jeong3, Jung Ho Shin1, Daniel J Joe1, DoHyun Kim2, Chang Wan Kim2, Jung Hwan Park1, Jae Hee Lee1, Daesoo Kim3, Chan-Soo Shin2, Keon Jae Lee1.   

Abstract

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm-2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  bioelectronics; flexible GaN vertical light-emitting diodes; light-emitting diodes; transparent micro-light-emtting-diodes; wireless power transfer

Mesh:

Substances:

Year:  2018        PMID: 29775490     DOI: 10.1002/adma.201800649

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  6 in total

1.  Programmable and scalable transfer printing with high reliability and efficiency for flexible inorganic electronics.

Authors:  Chengjun Wang; Changhong Linghu; Shuang Nie; Chenglong Li; Qianjin Lei; Xiang Tao; Yinjia Zeng; Yipu Du; Shun Zhang; Kaixin Yu; Hao Jin; Weiqiu Chen; Jizhou Song
Journal:  Sci Adv       Date:  2020-06-17       Impact factor: 14.136

Review 2.  Recent Progress in Wireless Sensors for Wearable Electronics.

Authors:  Young-Geun Park; Sangil Lee; Jang-Ung Park
Journal:  Sensors (Basel)       Date:  2019-10-09       Impact factor: 3.576

3.  Filling the gap between topological insulator nanomaterials and triboelectric nanogenerators.

Authors:  Mengjiao Li; Hong-Wei Lu; Shu-Wei Wang; Rei-Ping Li; Jiann-Yeu Chen; Wen-Shuo Chuang; Feng-Shou Yang; Yen-Fu Lin; Chih-Yen Chen; Ying-Chih Lai
Journal:  Nat Commun       Date:  2022-02-17       Impact factor: 14.919

4.  Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid.

Authors:  Artem Shushanian; Daisuke Iida; Zhe Zhuang; Yu Han; Kazuhiro Ohkawa
Journal:  RSC Adv       Date:  2022-02-07       Impact factor: 3.361

5.  Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle.

Authors:  Junseok Jeong; Qingxiao Wang; Janghwan Cha; Dae Kwon Jin; Dong Hoon Shin; Sunah Kwon; Bong Kyun Kang; Jun Hyuk Jang; Woo Seok Yang; Yong Seok Choi; Jinkyoung Yoo; Jong Kyu Kim; Chul-Ho Lee; Sang Wook Lee; Anvar Zakhidov; Suklyun Hong; Moon J Kim; Young Joon Hong
Journal:  Sci Adv       Date:  2020-06-03       Impact factor: 14.136

6.  Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes.

Authors:  Friedhard Römer; Martin Guttmann; Tim Wernicke; Michael Kneissl; Bernd Witzigmann
Journal:  Materials (Basel)       Date:  2021-12-20       Impact factor: 3.623

  6 in total

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