Literature DB >> 29736942

Raman Signatures of Broken Inversion Symmetry and In-Plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4.

Yinan Liu1, Qiangqiang Gu1, Yu Peng2, Shaomian Qi1, Na Zhang3, Yinong Zhang1, Xiumei Ma4, Rui Zhu4, Lianming Tong3, Ji Feng1,5,6, Zheng Liu2,7, Jian-Hao Chen1,6.   

Abstract

The layered ternary compound TaIrTe4 is an important candidate to host the recently predicted type-II Weyl fermions. However, a direct and definitive proof of the absence of inversion symmetry in this material, a prerequisite for the existence of Weyl Fermions, has so far remained evasive. Herein, an unambiguous identification of the broken inversion symmetry in TaIrTe4 is established using angle-resolved polarized Raman spectroscopy. Combining with high-resolution transmission electron microscopy, an efficient and nondestructive recipe to determine the exact crystallographic orientation of TaIrTe4 crystals is demonstrated. Such technique could be extended to the fast identification and characterization of other type-II Weyl fermions candidates. A surprisingly strong in-plane electrical anisotropy in TaIrTe4 thin flakes is also revealed, up to 200% at 10 K, which is the strongest known electrical anisotropy for materials with comparable carrier density, notably in such good metals as copper and silver.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  2D material; DFT calculations; Raman spectroscopy; in-plane anisotropy; type-II Weyl semimetal

Year:  2018        PMID: 29736942     DOI: 10.1002/adma.201706402

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  3 in total

1.  Gate tunable giant anisotropic resistance in ultra-thin GaTe.

Authors:  Hanwen Wang; Mao-Lin Chen; Mengjian Zhu; Yaning Wang; Baojuan Dong; Xingdan Sun; Xiaorong Zhang; Shimin Cao; Xiaoxi Li; Jianqi Huang; Lei Zhang; Weilai Liu; Dongming Sun; Yu Ye; Kepeng Song; Jianjian Wang; Yu Han; Teng Yang; Huaihong Guo; Chengbing Qin; Liantuan Xiao; Jing Zhang; Jianhao Chen; Zheng Han; Zhidong Zhang
Journal:  Nat Commun       Date:  2019-05-24       Impact factor: 14.919

2.  A Raman probe of phonons and electron-phonon interactions in the Weyl semimetal NbIrTe4.

Authors:  Iraj Abbasian Shojaei; Seyyedesadaf Pournia; Congcong Le; Brenden R Ortiz; Giriraj Jnawali; Fu-Chun Zhang; Stephen D Wilson; Howard E Jackson; Leigh M Smith
Journal:  Sci Rep       Date:  2021-04-14       Impact factor: 4.379

Review 3.  In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects.

Authors:  Siwen Zhao; Baojuan Dong; Huide Wang; Hanwen Wang; Yupeng Zhang; Zheng Vitto Han; Han Zhang
Journal:  Nanoscale Adv       Date:  2019-12-06
  3 in total

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