| Literature DB >> 29724037 |
Guanyu Liu1,2, Qiulin Tan3,4, Hairong Kou5,6, Lei Zhang7,8, Jinqi Wang9,10, Wen Lv11,12, Helei Dong13,14, Jijun Xiong15,16.
Abstract
Flexible electronics, which can be distributed on any surface we need, are highly demanded in the development of Internet of Things (IoT), robot technology and electronic skins. Temperature is a fundamental physical parameter, and it is an important indicator in many applications. Therefore, a flexible temperature sensor is required. Here, we report a simple method to fabricate three lightweight, low-cost and flexible temperature sensors, whose sensitive materials are reduced graphene oxide (r-GO), single-walled carbon nanotubes (SWCNTs) and multi-wall carbon nanotubes (MWCNTs). By comparing linearity, sensitive and repeatability, we found that the r-GO temperature sensor had the most balanced performance. Furthermore, the r-GO temperature sensor showed good mechanical properties and it could be bent in different angles with negligible resistance change. In addition, the performance of the r-GO temperature sensor remained stable under different kinds of pressure and was unaffected by surrounding environments, like humidity or other gases, because of the insulating layer on its sensitive layer. The easy-fabricated process and economy, together with the remarkable performance of the r-GO temperature sensor, suggest that it is suitable for use as a robot skin or used in the environment of IoT.Entities:
Keywords: IoT; flexible sensor; reduced graphene oxide; robot skin; temperature sensor
Year: 2018 PMID: 29724037 PMCID: PMC5982612 DOI: 10.3390/s18051400
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1Fabrication process of the temperature sensors: (a) polyethylene terephthalate (PET) cleaning with acetone, alcohol and deionized (DI) water; (b) O2 plasma etching; (c) printing two conductive thin wires; (d) the fabrication of sensitive layer using air-spray coating; (e) the fabrication process of insulating layer; (f) the vertical view of the temperature sensor; (g) the diagram on the left is a dimensional view of the sensor, including the size of the sensitive area, the overall size and the thickness. The diagram on the left shows the good flexibility of the sensor; (h) One of the possible applications of the temperature sensor.
Figure 2Experimental characterizations of the flexible temperature sensors: (a,d,g) the resistance change for r-GO, MWCNTS and SWCNTS respectively; (b,e,h) the relative resistance change in the three temperature sensors for temperatures from 30 °C to 100 °C; (c,f,i) the resistance responses of these three sensors to three cycles of heating and cooling.
Figure 3Response and recovery curve of the temperature sensor between room temperature (RT) and 45 °C. The inset is the cup with the attached sensor.
Some kinds of flexible temperature sensors and their performances.
| Sensitive Material | Range of Measurement (°C) | Linearity | Sensitivity | Response Time | Ref. |
|---|---|---|---|---|---|
| reduced graphene oxide (r-GO) | 30–100 | Yes | 0.6345% °C−1 | 1.2 s | ours |
| r-GO filled cellulose films | 25–80 | Yes | / | / | [ |
| Carbon nanotube | 21–80 | Yes | 0.25% °C−1 | 1~2 s | [ |
| single-walled carbon nanotubes (SWCNT) | 0–80 | Yes | / | / | [ |
| Ag | 20–60 | Yes | 0.223% °C−1 | <80 ms | [ |
| Ni fibers | 0–100 | Yes | 0.48% °C−1 | / | [ |
| Au | 30–80 | Yes | 0.15 °C−1 | 1.7–2.3 s | [ |
Figure 4Layered structure model and SEM of r-GO: (a) schematic showing the layered structure model before pressure; (b) schematic illustrating the layered structure after pressure; (c) SEM image of the r-GO before pressure; (d) SEM image of the r-GO after pressure.
Figure 5The relationship between the resistance of the temperature sensor and the applied pressure. The inset is a field photograph of the pressure test and a schematic diagram of the application of pressure on the sensitive area: (a) the resistance change when applying pressure to the whole sensitive area of the sensor, from 1 N to 10 N; (b) the resistance change when applying pressure only on a point, from 1 N to 10 N; (c) the resistance change when applying pressure on a strip area by a wedge, from 1 N to 10 N.
Figure 6The length of the long side of the sensor (L) and bending schematic diagram of the temperature sensor: (a) L = 30 mm; (b) L = 25 mm; (c) L = 20 mm; (d) L = 15 mm; (e) L = 10 mm; (f) the way to control the bending.
Figure 7The resistance change in the r-GO sensor when bending. The table in this figure shows the specific change in resistance.