| Literature DB >> 29667409 |
Xuanxuan Chen1,2, Chun Zhou1, Shuang-Jun Chen3, Gordon S W Craig1, Paulina Rincon-Delgadillo2, Takahiro Dazai4, Ken Miyagi4, Takaya Maehashi4, Akiyoshi Yamazaki4, Roel Gronheid2, Mark P Stoykovich1, Paul F Nealey1,5.
Abstract
Polystyrene- block-poly(methyl methacrylate) (PS- b-PMMA) is one of the prototypical block copolymers in directed self-assembly (DSA) research and development, with standardized protocols in place for processing on industrially relevant 300 mm wafers. Scaling of DSA patterns to pitches below 20 nm using PS- b-PMMA, however, is hindered by the relatively low Flory-Huggins interaction parameter, χ. Here, we investigate the approach of adding small amounts of ionic liquids (ILs) into PS- b-PMMA, which selectively segregates into the PMMA domain and effectively increases the χ parameter and thus the pattern resolution. The amount of IL additive is small enough to result in limited changes in PS- b-PMMA's surface and interfacial properties, thus maintaining industry-friendly processing by thermal annealing with a free surface. Three different ILs are studied comparatively regarding their compositional process window, capability of increasing χ, and thermal stability. By adding ∼3.1 vol % of the champion IL into a low-molecular-weight PS- b-PMMA ( Mn = 10.3k- b-9.5k), we demonstrated DSA on chemically patterned substrates of lamellar structures with feature sizes <8.5 nm. Compatibility of the PS- b-PMMMA/IL blends with the standardized processes that have been previously developed suggests that such blend materials could provide a drop-in solution for sub-10 nm lithography with the processing advantages of PS- b-PMMA.Entities:
Keywords: block copolymer; directed self-assembly; high χ; ionic liquid; sub-10 nm lithography; thermal annealing
Year: 2018 PMID: 29667409 DOI: 10.1021/acsami.8b02990
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229