Literature DB >> 29667255

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines.

Doo Seok Jeong1,2, Cheol Seong Hwang3.   

Abstract

Recent progress in deep learning extends the capability of artificial intelligence to various practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis. While such DNN is virtually built on contemporary data centers of the von Neumann architecture, physical (in part) DNN of non-von Neumann architecture, also known as neuromorphic computing, can remarkably improve learning and inference efficiency. Particularly, resistance-based nonvolatile random access memory (NVRAM) highlights its handy and efficient application to the multiply-accumulate (MAC) operation in an analog manner. Here, an overview is given of the available types of resistance-based NVRAMs and their technological maturity from the material- and device-points of view. Examples within the strategy are subsequently addressed in comparison with their benchmarks (virtual DNN in deep learning). A spiking neural network (SNN) is another type of neural network that is more biologically plausible than the DNN. The successful incorporation of resistance-based NVRAM in SNN-based neuromorphic computing offers an efficient solution to the MAC operation and spike timing-based learning in nature. This strategy is exemplified from a material perspective. Intelligent machines are categorized according to their architecture and learning type. Also, the functionality and usefulness of NVRAM-based neuromorphic computing are addressed.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  artificial intelligence; intelligent machine; neuromorphic computing; nonvolatile random access memory

Year:  2018        PMID: 29667255     DOI: 10.1002/adma.201704729

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  9 in total

1.  TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices.

Authors:  Katarzyna Bejtka; Gianluca Milano; Carlo Ricciardi; Candido F Pirri; Samuele Porro
Journal:  ACS Appl Mater Interfaces       Date:  2020-06-22       Impact factor: 9.229

2.  Flexible Sol-Gel-Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process.

Authors:  Hyeon-Joong Kim; Do-Won Kim; Won-Yong Lee; Kyoungdu Kim; Sin-Hyung Lee; Jin-Hyuk Bae; In-Man Kang; Kwangeun Kim; Jaewon Jang
Journal:  Materials (Basel)       Date:  2022-03-03       Impact factor: 3.623

3.  Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field.

Authors:  Do-Won Kim; Hyeon-Joong Kim; Won-Yong Lee; Kyoungdu Kim; Sin-Hyung Lee; Jin-Hyuk Bae; In-Man Kang; Kwangeun Kim; Jaewon Jang
Journal:  Materials (Basel)       Date:  2022-03-05       Impact factor: 3.623

4.  Neuromorphic device based on silicon nanosheets.

Authors:  Chenhao Wang; Xinyi Xu; Xiaodong Pi; Mark D Butala; Wen Huang; Lei Yin; Wenbing Peng; Munir Ali; Srikrishna Chanakya Bodepudi; Xvsheng Qiao; Yang Xu; Wei Sun; Deren Yang
Journal:  Nat Commun       Date:  2022-09-05       Impact factor: 17.694

5.  Reversible electrical percolation in a stretchable and self-healable silver-gradient nanocomposite bilayer.

Authors:  Jinhong Park; Duhwan Seong; Yong Jun Park; Sang Hyeok Park; Hyunjin Jung; Yewon Kim; Hyoung Won Baac; Mikyung Shin; Seunghyun Lee; Minbaek Lee; Donghee Son
Journal:  Nat Commun       Date:  2022-09-05       Impact factor: 17.694

6.  Probabilistic computing using Cu0.1Te0.9/HfO2/Pt diffusive memristors.

Authors:  Kyung Seok Woo; Jaehyun Kim; Janguk Han; Woohyun Kim; Yoon Ho Jang; Cheol Seong Hwang
Journal:  Nat Commun       Date:  2022-09-30       Impact factor: 17.694

7.  Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes.

Authors:  Hae-In Kim; Taehun Lee; Won-Yong Lee; Kyoungdu Kim; Jin-Hyuk Bae; In-Man Kang; Sin-Hyung Lee; Kwangeun Kim; Jaewon Jang
Journal:  Materials (Basel)       Date:  2022-10-02       Impact factor: 3.748

8.  Multi-Bit Biomemory Based on Chitosan: Graphene Oxide Nanocomposite with Wrinkled Surface.

Authors:  Lei Li; Guangming Li
Journal:  Micromachines (Basel)       Date:  2020-06-10       Impact factor: 2.891

9.  Curved neuromorphic image sensor array using a MoS2-organic heterostructure inspired by the human visual recognition system.

Authors:  Changsoon Choi; Juyoung Leem; Minsung Kim; Amir Taqieddin; Chullhee Cho; Kyoung Won Cho; Gil Ju Lee; Hyojin Seung; Hyung Jong Bae; Young Min Song; Taeghwan Hyeon; Narayana R Aluru; SungWoo Nam; Dae-Hyeong Kim
Journal:  Nat Commun       Date:  2020-11-23       Impact factor: 17.694

  9 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.