| Literature DB >> 29623130 |
Lin Gan1, Xianglong Li1, Xinyi Cai1, Kunkun Liu1, Wei Li1, Shi-Jian Su1.
Abstract
The design of orange-light emitting, thermally activated, delayed fluorescence (TADF) materials is necessary and important for the development and application of organic light-emitting diodes (OLEDs). Herein, two donor-acceptor-donor (D-A-D)-type orange TADF materials based on fluorenone and acridine, namely 2,7-bis(9,9-dimethylacridin-10(9H)-yl)-9H-fluoren-9-one (27DACRFT, 1) and 3,6-bis(9,9-dimethylacridin-10(9H)-yl)-9H-fluoren-9-one (36DACRFT, 2), were successfully synthetized and characterized. The studies on their structure-property relationship show that the different configurations have a serious effect on the photoluminescence and electroluminescence performance according to the change in singlet-triplet splitting energy (ΔEST) and excited state geometry. This indicates that a better configuration design can reduce internal conversion and improve triplet exciton utilization of TADF materials. Importantly, OLEDs based on 2 exhibited a maximum external quantum efficiency of 8.9%, which is higher than the theoretical efficiency of the OLEDs based on conventional fluorescent materials.Entities:
Keywords: fluorenone acceptor; orange light emission; organic light-emitting diode (OLED); thermally activated delayed fluorescence
Year: 2018 PMID: 29623130 PMCID: PMC5870154 DOI: 10.3762/bjoc.14.55
Source DB: PubMed Journal: Beilstein J Org Chem ISSN: 1860-5397 Impact factor: 2.883
Scheme 1Molecular structures of isomers 1 and 2.
Thermal and electrochemical properties of the investigated compounds 1 and 2.
| Compound | IPc (eV) | EAd (eV) | ||
| 361/N.A. | −3.20 | −5.10 | 1.90 | |
| 363/N.A. | −3.15 | −5.30 | 2.15 | |
aDecomposition temperature (Td) at 5 wt % weight loss obtained from TGA measurements; bglass-transition temperature (Tg) obtained by DSC measurements; cionization potential (IP) calculated from the empirical formula: IP = −(Ered + 4.4) eV, the cyclic voltammetry was carried out in 0.1 M n-Bu4NPF6 in CH2Cl2/CH3CN 4:1 solution; delectron affinity (EA) calculated from the empirical formula: IP = −(Eox + 4.4) eV; eenergy gap (Eg) estimated from cyclic voltammetry measurements.
Figure 1(a) The optimized S0 geometries of 1 (left) and 2 (right) on B3LYP/6-31G* level in gas phase; (b) The frontier molecular orbital distributions of 1 and 2; (c) The optimized S1 geometries in TD-DFT on m062x/6-31G* level.
The calculated HOMO, LUMO, twisting angles (θ, θ’), bond lengths (l, l’), ΔEST and dipole moment in gas phase for S0 and in solution for S1, from DFT and TD-DFT.
| Compound | S0 | S1 | ||||||
| HOMO (eV) | LUMO (eV) | θ (°) | l (Å) | Δ | Dipole moment (D) | θ’ (°) | l’ (Å) | |
| −5.00 | −2.61 | 89.33 | 1.433 | 0.33 | 3.501 | 63.74 | 1.419 | |
| −5.03 | −2.61 | 88.80 | 1.434 | 0.27 | 1.814 | 89.36 | 1.434 | |
Figure 2UV–vis (solid point) and photoluminescence (hollow point) spectra of 1 and 2 in dilute solution.
Figure 3The low temperature photoluminescence spectra of 1 (left) and 2 (right) in toluene at 77 K.
Photophysical properties of the investigated molecules 1 and 2.
| Compound | λabsa (nm) | λemb (nm) | λema (nm) | λemc (nm) | ΦPLc (%) | Δ | |
| 345, 456 | 517, 545 | 593 | 593 | 2.32 | 7 | 0.19 | |
| 345, 456 | 517, 545 | 593 | 581 | 2.32 | 26 | 0.09 | |
aUltraviolet–visible absorption spectra and photoluminescence spectra measured in toluene; bphotoluminescence (PL) spectra measured in n-hexane; cphotoluminescence spectra and PL quantum yields measured in doped film 8 wt % in CBP; denergy gap (Eg) calculated from the empirical formula: Eg = 1240/λabs-onset, where λabs-onset is the onset of ultraviolet–visible absorption spectra. eΔEST is calculated from the onset of photoluminescence spectra at 77 K.
Figure 4(a) Time-resolved transient photoluminescence decay spectra of the doped films (8 wt % in CBP) measured in N2 at 300 K; time-resolved transient photoluminescence decay spectra of (b) 2:CBP and (c) 1:CBP measured in N2 at different temperatures.
Photophysical properties of the 1 and 2 doped in CBP films (8 wt %) at room temperature.
| Compound | Φ | ΦPF | ΦTADF | τPF (ns) | τTADF (μs) | ||||
| 0.07 | 0.06 | 0.01 | 11.6 | 10.6 | 5.2 | 6.91 | 1.23 | 1.10 | |
| 0.26 | 0.16 | 0.10 | 18.5 | 4.28 | 8.6 | 2.45 | 2.07 | 3.81 | |
Figure 5Energy level (eV) diagrams of OLED devices and the chemical structures of the materials utilized for device fabrication.
Summary of the device performances of the OLEDs based on 1 and 2.
| Devicea | CEmax (cd/A) | PEmax (lm/W) | EQEmax (%) | at 100 cd/m2 | at 1000 cd/m2 | |||
| V (V) | EQE (%) | V (V) | EQE (%) | |||||
| 3.8 | 5.70 | 4.98 | 2.93 | 6.1 | 1.77 | 9.2 | 0.67 | |
| 3.6 | 21.84 | 19.11 | 8.92 | 5.0 | 7.53 | 6.7 | 4.55 | |
aThe device structure is ITO/TAPC (25 nm)/CBP:1 or 2 (1 wt %, 35 nm)/TmPyPB (55 nm)/LiF (1 nm)/Al. bAt the luminance 1 cd/m2.
Figure 6J–V–L (current density–voltage–luminance) (left) and EQE–current density characteristics of the devices (right). Inset: Electroluminescence spectra of the devices at a luminance of 1 cd m−2.
Figure 7EQE–current density characteristics of the devices based on 1 (top) and 2 (bottom). The solid lines represent the simulated EQE by employing the TTA model.