| Literature DB >> 29593333 |
Martin Olsen1, Jonas Örtegren2, Renyun Zhang2, Salim Reza3, Henrik Andersson3, Håkan Olin2.
Abstract
The triboelectric effect, charging by contact, is the working principle in a device called a triboelectric nanogenerator. They are used as efficient energy transducers in energy harvesting. In such generators the charging of surfaces at contact is followed by a separation of the surfaces increasing the electrical energy which can subsequently be used. Different materials have different triboelectric potentials leading to charging at contact. The temperature dependence of the charging has just recently been studied: the triboelectric effect is decreasing with temperature for a generator of Al-PTFE-Cu. Here, we suggest a mechanism to explain this effect assuming ion transfer using a two-level Schottky model where the two levels corresponds to the two surfaces. The difference in binding energy for ions on the two surfaces then enters the formula for charging. We fit the triboelectric power density as a function of temperature obtained from a two-level Schottky model to measured data for nanogenerators made of Al-PTFE-Cu found in three references. We obtain an average separation energy corresponding to a temperature of 365 K which is of the right magnitude for physically adsorbed atoms. We anticipate that this model could be used for many types of triboelectric nanogenerators.Entities:
Year: 2018 PMID: 29593333 PMCID: PMC5871784 DOI: 10.1038/s41598-018-23666-y
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Plots of power density or open circuit voltage as a function of temperature from experiments with triboelectric generators using Al and PTFE as contact materials. (A) Plot of the triboelectric power density as a function of temperature using data points from Su et al.[13] fitted to Eq. (6). The curve is fitted to data using the least square method in gnuplot yielding a separation energy corresponding to the temperature E/k = 451 K. (B) Picture of the actual ion distribution and the net charge distribution. (C) Plot of normalized voltage as a function of temperature from Wen et al.[12] where Eq. (5) is fitted to data to find E/k = 374 K. Between 200 K and 300 K Wen et al. found a large peak that however was not reproduced by Su et al. or by Lu et al. shown above. The four highest data points in the peak are excluded from fit. (D) Plot of voltage as a function of temperature from Lu et al.[14] where Eq. (5) is fitted to data. We found for this fit E/k = 269 K.
Power density as a function of temperature from three references measuring on triboelectric nanogenerators using Al and PTFE as contact materials. Su et al. and Lu et al. used the frequencies 0.05 Hz and 3 Hz respectively. For Wen et al. two experimental devices were used: one for low temperature regime 77 K–300 K and one for high temperatures 300 K–500 K. The low temperature device used the frequency 0.03 Hz and the high temperature device used the frequency 0.3 Hz. The average of the fitted characteristic temperatures is E/kB = 365 K. All fitted values are within the interval E/kB = 365 ± 96 K.
| Reference | Temperature interval | Fitted | Power density v.s. temperature |
|---|---|---|---|
| Wen | 77 K–500 K | 374 K1 | Decreasing trend but peak between 200 K and 300 K. |
| Su | 77 K–320 K | 451 K2 | Decreasing with temperature, see Fig. |
| Lu | 250 K–420 K | 269 K3 | Decreasing trend but plateau between 290 K and 370 K. |
| Average | 365 K4 |
Note 1: Model fitted to 11 out of 15 data points to calculate E/kB, see Fig. 1C. Four data points at peak excluded from fit.
Note 2: Model fitted to all five data points, see Fig. 1A.
Note 3: Model fitted to all 35 data points, see Fig. 1D.
Note 4: All fitted values from Wen et al., Su et al. and Lu et al. are in the interval E/k = 365 ± 96 K.
Average of measured work function differences for Ar, Kr and Xe atoms adsorbed to substrates of Au, Ag and Cu from Hückstädt et al.[23]. The work function difference is for a mono layer of adsorbate compared to a clean substrate surface.
| Ar | Kr | Xe | |
|---|---|---|---|
| Au(111) substrate | 0.38 ± 0.03 eV | 0.42 ± 0.02 eV | 0.53 ± 0.03 eV |
| Ag(111) substrate | 0.40 ± 0.03 eV | 0.46 ± 0.02 eV | 0.59 ± 0.03 eV |
| Cu(111) substrate | 0.42 ± 0.03 eV | 0.49 ± 0.03 eV | 0.62 ± 0.03 eV |