| Literature DB >> 29584676 |
Haosheng Pang1, Minglin Li2,3,4, Chenghui Gao5,6, Haili Huang7, Weirong Zhuo8, Jianyue Hu9, Yaling Wan10, Jing Luo11, Weidong Wang12.
Abstract
The single-layer molybdenum disulfide (SLMoS2) nanosheets have been experimentally discovered to exist in two different polymorphs, which exhibit different electrical properties, metallic or semiconducting. Herein, molecular dynamics (MD) simulations of nanoindentation and uniaxial compression were conducted to investigate the phase transition of SLMoS2 nanosheets. Typical load-deflection curves, stress-strain curves, and local atomic structures were obtained. The loading force decreases sharply and then increases again at a critical deflection under the nanoindentation, which is inferred to the phase transition. In addition to the layer thickness, some related bond lengths and bond angles were also found to suddenly change as the phase transition occurs. A bell-like hollow, so-called residual deformation, was found to form, mainly due to the lattice distortion around the waist of the bell. The effect of indenter size on the residual hollow was also analyzed. Under the uniaxial compression along the armchair direction, a different phase transition, a uniformly quadrilateral structure, was observed when the strain is greater than 27.7%. The quadrilateral structure was found to be stable and exhibit metallic conductivity in view of the first-principle calculation.Entities:
Keywords: MoS2; molecular dynamics; nanoindentation; phase transition; uniaxial compression
Year: 2018 PMID: 29584676 PMCID: PMC5951348 DOI: 10.3390/ma11040502
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Figure 1The force–deflection curve of SLMoS2 nanosheets.
Figure 2The force–deflection curves for the loading–unloading–reloading process of SLMoS2 nanosheets: (a) The deflection is smaller than δ; (b) The deflection is greater than the δ but smaller than δ.
Figure 3The atomic configuration at the cross section of the deformed SLMoS2 (a); the labeled atoms in the distorted area (b); the zoom in view of the residual hollow (c).
Figure 4The S–Mo bond lengths (a), S–Mo–S bond angles and Mo–S–Mo angles (b), and the layer thickness of S–S (c) versus deflection during the loading process and unloading process (the labeled atoms are shown in Figure 3).
Figure 5The atomic structures of SLMoS2 nanosheets in the process of nanoindentation: (a) before loading; (b) after unloading.
Figure 6The sectional view of atoms in residual indentation with different indenter radii of 10 Å, 15 Å, 20 Å, and 40 Å at the deflection exceeding δ after the unloading process. The rectangular, prismatic, triangular, and pentagonal points are the atomic positions of the Mo atoms close to the plane (yz plane) crossing the center of the indenter.
Figure 7The stress–strain curves of the SLMoS2 nanosheets under uniaxial compression along the armchair direction. The insets show (a) The distorted hexagonal lattice; (b) the quadrilateral lattice; (c) the buckling.
Figure 8The band structures of (a) the initial hexagonal SLMoS2 nanosheets (semiconducting) and (b) the new phase of the quadrilateral structure (metallic).