| Literature DB >> 29578325 |
Minkyu Cho1, Jeonghoon Yun1, Donguk Kwon1, Kyuyoung Kim1, Inkyu Park1.
Abstract
High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H2 sensitivity (Δ I/ I0 > 700-0.5% H2 concentrations) and fast response time (τ10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.Entities:
Keywords: Schottky diode; flexible gas sensor; hydrogen sensor; low-power gas sensor; palladium; silicon nanomembrane
Year: 2018 PMID: 29578325 DOI: 10.1021/acsami.8b01583
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229