Literature DB >> 29558797

The Dielectric Impact of Layer Distances on Exciton and Trion Binding Energies in van der Waals Heterostructures.

Matthias Florian1, Malte Hartmann1, Alexander Steinhoff1, Julian Klein2,3, Alexander W Holleitner2,3, Jonathan J Finley2,3, Tim O Wehling1,4, Michael Kaniber2,3, Christopher Gies1.   

Abstract

The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer, the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as exciton and trion binding energies. By combining an electrostatic model for a dielectric heteromultilayered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. An analytic treatment is used to provide further insight into how the interlayer gap influences different excitonic transitions. Spectroscopical measurements in combination with a direct solution of a three-particle Schrödinger equation reveal trion binding energies that correctly predict recently measured interlayer distances and shed light on the effect of temperature annealing.

Entities:  

Keywords:  2D materials; band gap engineering; dielectric screening; transition-metal dichalcogenides; trion binding energy; van der Waals heterostructures

Year:  2018        PMID: 29558797     DOI: 10.1021/acs.nanolett.8b00840

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  7 in total

1.  Localized Excitons in NbSe2-MoSe2 Heterostructures.

Authors:  Jaydeep Joshi; Tong Zhou; Sergiy Krylyuk; Albert V Davydov; Igor Žutić; Patrick M Vora
Journal:  ACS Nano       Date:  2020-07-13       Impact factor: 15.881

2.  Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor.

Authors:  Shao-Yu Chen; Thomas Goldstein; Takashi Taniguchi; Kenji Watanabe; Jun Yan
Journal:  Nat Commun       Date:  2018-09-13       Impact factor: 14.919

3.  Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation.

Authors:  J Klein; M Lorke; M Florian; F Sigger; L Sigl; S Rey; J Wierzbowski; J Cerne; K Müller; E Mitterreiter; P Zimmermann; T Taniguchi; K Watanabe; U Wurstbauer; M Kaniber; M Knap; R Schmidt; J J Finley; A W Holleitner
Journal:  Nat Commun       Date:  2019-06-21       Impact factor: 14.919

4.  Polariton hyperspectral imaging of two-dimensional semiconductor crystals.

Authors:  Christian Gebhardt; Michael Förg; Hisato Yamaguchi; Ismail Bilgin; Aditya D Mohite; Christopher Gies; Matthias Florian; Malte Hartmann; Theodor W Hänsch; Alexander Högele; David Hunger
Journal:  Sci Rep       Date:  2019-09-24       Impact factor: 4.379

5.  Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields.

Authors:  M Goryca; J Li; A V Stier; T Taniguchi; K Watanabe; E Courtade; S Shree; C Robert; B Urbaszek; X Marie; S A Crooker
Journal:  Nat Commun       Date:  2019-09-13       Impact factor: 14.919

6.  Optical generation of high carrier densities in 2D semiconductor heterobilayers.

Authors:  Jue Wang; Jenny Ardelean; Yusong Bai; Alexander Steinhoff; Matthias Florian; Frank Jahnke; Xiaodong Xu; Mackillo Kira; James Hone; X-Y Zhu
Journal:  Sci Adv       Date:  2019-09-13       Impact factor: 14.136

7.  Boosting quantum yields in two-dimensional semiconductors via proximal metal plates.

Authors:  Yongjun Lee; Johnathas D'arf Severo Forte; Andrey Chaves; Anshuman Kumar; Trang Thu Tran; Youngbum Kim; Shrawan Roy; Takashi Taniguchi; Kenji Watanabe; Alexey Chernikov; Joon I Jang; Tony Low; Jeongyong Kim
Journal:  Nat Commun       Date:  2021-12-07       Impact factor: 14.919

  7 in total

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