| Literature DB >> 29555774 |
Jianming Lu1, Oleksandr Zheliuk1, Qihong Chen1,2, Inge Leermakers3,4, Nigel E Hussey3,4, Uli Zeitler3,4, Jianting Ye5.
Abstract
Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as a higher transition temperature and a stronger critical field. Nevertheless, besides being unstable in air, the weak tunability in these intrinsically metallic monolayers has limited the exploration of monolayer superconductivity, hindering their potential in electronic applications (e.g., superconductor-semiconductor hybrid devices). Here we show that using field effect gating, we can induce superconductivity in monolayer WS2 grown by chemical vapor deposition, a typical ambient-stable semiconducting transition metal dichalcogenide (TMD), and we are able to access a complete set of competing electronic phases over an unprecedented doping range from band insulator, superconductor, to a reentrant insulator at high doping. Throughout the superconducting dome, the Cooper pair spin is pinned by a strong internal spin-orbit interaction, making this material arguably the most resilient superconductor in the external magnetic field. The reentrant insulating state at positive high gating voltages is attributed to localization induced by the characteristically weak screening of the monolayer, providing insight into many dome-like superconducting phases observed in field-induced quasi-2D superconductors.Entities:
Keywords: Ising superconductivity; ion-gated transistor; monolayer; spin-orbit coupling; transition metal dichalcogenides
Year: 2018 PMID: 29555774 PMCID: PMC5889638 DOI: 10.1073/pnas.1716781115
Source DB: PubMed Journal: Proc Natl Acad Sci U S A ISSN: 0027-8424 Impact factor: 11.205