| Literature DB >> 29547784 |
Weiming Wu1, Jiugou Leng2, Hailong Mei2, Shubin Yang3.
Abstract
Defect-rich, boron (B) and nitrogen (N) dual-doped and inert BN covalent bonds-free graphenes (BNGs) can be successfully synthesized via a method of two-step doping combined with chemical etching. B and N doping degree and surface areas of BNGs can be enhanced facilely by chemical etching without forming inert covalent BN bonds. The as-obtained porous BNGs deliver more superior electro-catalytic activity for oxygen reduction reaction than the unetched BNGs and commercial Pt/C catalysts.Entities:
Keywords: Defect-abundant; Dual-doped graphene; Oxygen reduction reaction
Year: 2018 PMID: 29547784 DOI: 10.1016/j.jcis.2018.03.022
Source DB: PubMed Journal: J Colloid Interface Sci ISSN: 0021-9797 Impact factor: 8.128