Literature DB >> 29545653

RELATIVISTIC MR-MP ENERGY LEVELS FOR L-SHELL IONS OF SILICON.

Juan A Santana1, Nahyr A Lopez-Dauphin1, Peter Beiersdorfer2.   

Abstract

Level energies are reported for Si V, Si VI, Si VII, Si VIII, Si IX, Si X, Si XI and Si XII. The energies have been calculated with the relativistic Multi-Reference Møller-Plesset Perturbation Theory method and include valence and K-vacancy states with nl up to 5f. The accuracy of the calculated level energies is established by comparison with the recommended data listed in the National Institute of Standards and Technology (NIST) on-line database. The average deviation of valence level energies ranges from 0.20 eV in Si V to 0.04 eV in Si XII. For K-vacancy states, the available values recommended in the NIST database are limited to Si XII and Si XIII. The average energy deviation is below 0.3 eV for K-vacancy states. The extensive and accurate dataset presented here greatly augments the amount of available reference level energies. We expect our data to ease the line identification of L-shell ions of Si in celestial sources and laboratory generated plasmas, and to serve as energy references in the absence of more accurate laboratory measurements.

Entities:  

Keywords:  atomic data; line: identification

Year:  2018        PMID: 29545653      PMCID: PMC5846692          DOI: 10.3847/1538-4365/aa94d2

Source DB:  PubMed          Journal:  Astrophys J Suppl Ser        ISSN: 0067-0049            Impact factor:   8.136


  1 in total

1.  Dirac-Fock-Breit self-consistent-field method: Gaussian basis-set calculations on many-electron atoms.

Authors: 
Journal:  Phys Rev A       Date:  1991-04-01       Impact factor: 3.140

  1 in total

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