Investigation on strain relaxation distribution in GaN-based μLEDs by Kelvin probe force microscopy and micro-photoluminescence.

GaN/InGaN multi-quantum-wells (MQWs) micron light emitting diodes (µLEDs) with the size ranging from 10 to 300 µm are fabricated. Effects of strain relaxation on the performance of µLEDs have been investigated both experimentally and numerically. Kelvin probe force microscopy (KPFM) and micro-photoluminescence (µPL) are used to characterize the strained area on micron pillars. Strain relaxation and reducing polarization field in MQWs almost affects the whole mesa for 10 µm LEDs and about 4% area around the lateral for 300 µm LEDs. It makes a great contribution to high performance for smaller size µLEDs. Moreover, an indirect nanoscale strain measurement for µLEDs are provided.