| Literature DB >> 29509395 |
Wangying Xu1, Hao Li2, Jian-Bin Xu2, Lei Wang2,3.
Abstract
Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This work surveys the recent advances in solution-processed metal oxide TFTs, including n-type oxide semiconductors, oxide dielectrics, and p-type oxide semiconductors. We first deliver a review on the history and present status of metal oxide TFTs. Then, we present the recent progress in solution-processed n-type oxide semiconductors, with a special focus on low-temperature and large-area solution-based approaches as well as emerging nondisplay applications. Next, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-power electronics. We further discuss the recent advances in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw conclusions and outline the perspectives over the research field.Entities:
Keywords: low-temperature; metal oxide TFTs; n-type oxide semiconductors; oxide dielectrics; p-type oxide semiconductors; solution-processed
Year: 2018 PMID: 29509395 DOI: 10.1021/acsami.7b16010
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229