Literature DB >> 29504511

Tunable conductivity in mesoporous germanium.

Meghan N Beattie1, Youcef A Bioud, David G Hobson, Abderraouf Boucherif, Christopher E Valdivia, Dominique Drouin, Richard Arès, Karin Hinzer.   

Abstract

Germanium-based nanostructures have attracted increasing attention due to favourable electrical and optical properties, which are tunable on the nanoscale. High densities of germanium nanocrystals are synthesized via electrochemical etching, making porous germanium an appealing nanostructured material for a variety of applications. In this work, we have demonstrated highly tunable electrical conductivity in mesoporous germanium layers by conducting a systematic study varying crystallite size using thermal annealing, with experimental conductivities ranging from 0.6 to 33 (×10-3) Ω-1 cm-1. The conductivity of as-prepared mesoporous germanium with 70% porosity and crystallite size between 4 and 10 nm is shown to be ∼0.9 × 10-3 Ω-1 cm-1, 5 orders of magnitude smaller than that of bulk p-type germanium. Thermal annealing for 10 min at 400 °C further reduced the conductivity; however, annealing at 450 °C caused a morphological transformation from columnar crystallites to interconnecting granular crystallites and an increase in conductivity by two orders of magnitude relative to as-prepared mesoporous germanium caused by reduced influence of surface states. We developed an electrostatic model relating the carrier concentration and mobility of p-type mesoporous germanium to the nanoscale morphology. Correlation within an order of magnitude was found between modelled and experimental conductivities, limited by variation in sample uniformity and uncertainty in void size and fraction after annealing. Furthermore, theoretical results suggest that mesoporous germanium conductivity could be tuned over four orders of magnitude, leading to optimized hybrid devices.

Entities:  

Year:  2018        PMID: 29504511     DOI: 10.1088/1361-6528/aab3f7

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  1 in total

1.  Uprooting defects to enable high-performance III-V optoelectronic devices on silicon.

Authors:  Youcef A Bioud; Abderraouf Boucherif; Maksym Myronov; Ali Soltani; Gilles Patriarche; Nadi Braidy; Mourad Jellite; Dominique Drouin; Richard Arès
Journal:  Nat Commun       Date:  2019-09-20       Impact factor: 14.919

  1 in total

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