Literature DB >> 29498729

Contact engineering for 2D materials and devices.

Daniel S Schulman1, Andrew J Arnold, Saptarshi Das.   

Abstract

Over the past decade, the field of two-dimensional (2D) layered materials has surged, promising a new platform for studying diverse physical phenomena that are scientifically intriguing and technologically relevant. Contacts are the communication links between these 2D materials and the three-dimensional world for probing and harnessing their exquisite electronic properties. However, fundamental challenges related to contacts often limit the ultimate performance and potential of 2D materials and devices. This article provides a comprehensive overview of the basic understanding and importance of contacts to 2D materials and various strategies for engineering and improving them. In particular, we elucidate the phenomenon of Fermi level pinning at the metal/2D contact interface, the Schottky versus Ohmic nature of the contacts and various contact engineering approaches including interlayer contacts, phase engineered contacts, and basal versus edge plane contacts, among others. Finally, we also discuss some of the relatively under-addressed and unresolved issues, such as contact scaling, and conclude with a future outlook.

Year:  2018        PMID: 29498729     DOI: 10.1039/c7cs00828g

Source DB:  PubMed          Journal:  Chem Soc Rev        ISSN: 0306-0012            Impact factor:   54.564


  39 in total

Review 1.  Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors.

Authors:  Chengxu Shen; Zhigang Yin; Fionn Collins; Nicola Pinna
Journal:  Adv Sci (Weinh)       Date:  2022-06-16       Impact factor: 17.521

2.  Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning.

Authors:  Theresia Knobloch; Burkay Uzlu; Yury Yu Illarionov; Zhenxing Wang; Martin Otto; Lado Filipovic; Michael Waltl; Daniel Neumaier; Max C Lemme; Tibor Grasser
Journal:  Nat Electron       Date:  2022-06-02

Review 3.  The Magnetic Genome of Two-Dimensional van der Waals Materials.

Authors:  Qing Hua Wang; Amilcar Bedoya-Pinto; Mark Blei; Avalon H Dismukes; Assaf Hamo; Sarah Jenkins; Maciej Koperski; Yu Liu; Qi-Chao Sun; Evan J Telford; Hyun Ho Kim; Mathias Augustin; Uri Vool; Jia-Xin Yin; Lu Hua Li; Alexey Falin; Cory R Dean; Fèlix Casanova; Richard F L Evans; Mairbek Chshiev; Artem Mishchenko; Cedomir Petrovic; Rui He; Liuyan Zhao; Adam W Tsen; Brian D Gerardot; Mauro Brotons-Gisbert; Zurab Guguchia; Xavier Roy; Sefaattin Tongay; Ziwei Wang; M Zahid Hasan; Joerg Wrachtrup; Amir Yacoby; Albert Fert; Stuart Parkin; Kostya S Novoselov; Pengcheng Dai; Luis Balicas; Elton J G Santos
Journal:  ACS Nano       Date:  2022-04-20       Impact factor: 18.027

4.  Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering.

Authors:  Siyuan Zhang; Son T Le; Curt A Richter; Christina A Hacker
Journal:  Appl Phys Lett       Date:  2019       Impact factor: 3.791

5.  Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2.

Authors:  Amir Muhammad Afzal; Muhammad Zahir Iqbal; Ghulam Dastgeer; Aqrab Ul Ahmad; Byoungchoo Park
Journal:  Adv Sci (Weinh)       Date:  2021-03-16       Impact factor: 16.806

6.  Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures.

Authors:  Jihoon Kim; A Venkatesan; Hanul Kim; Yewon Kim; Dongmok Whang; Gil-Ho Kim
Journal:  Adv Sci (Weinh)       Date:  2021-03-15       Impact factor: 16.806

Review 7.  Silicon/2D-material photodetectors: from near-infrared to mid-infrared.

Authors:  Chaoyue Liu; Jingshu Guo; Laiwen Yu; Jiang Li; Ming Zhang; Huan Li; Yaocheng Shi; Daoxin Dai
Journal:  Light Sci Appl       Date:  2021-06-09       Impact factor: 17.782

8.  Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics.

Authors:  Shisheng Li; Jinhua Hong; Bo Gao; Yung-Chang Lin; Hong En Lim; Xueyi Lu; Jing Wu; Song Liu; Yoshitaka Tateyama; Yoshiki Sakuma; Kazuhito Tsukagoshi; Kazu Suenaga; Takaaki Taniguchi
Journal:  Adv Sci (Weinh)       Date:  2021-04-02       Impact factor: 16.806

9.  Quantifying the spreading resistance of an anisotropic thin film conductor.

Authors:  Kazuhiko Seki; Toshitaka Kubo; Nan Ye; Tetsuo Shimizu
Journal:  Sci Rep       Date:  2020-06-30       Impact factor: 4.379

10.  Site-specific electrical contacts with the two-dimensional materials.

Authors:  Lok-Wing Wong; Lingli Huang; Fangyuan Zheng; Quoc Huy Thi; Jiong Zhao; Qingming Deng; Thuc Hue Ly
Journal:  Nat Commun       Date:  2020-08-07       Impact factor: 14.919

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