| Literature DB >> 29483504 |
Diego Colombara1,2, Florian Werner3, Torsten Schwarz4, Ingrid Cañero Infante5, Yves Fleming6, Nathalie Valle6, Conrad Spindler3, Erica Vacchieri7, Germain Rey3, Mael Guennou6, Muriel Bouttemy8, Alba Garzón Manjón4, Inmaculada Peral Alonso3, Michele Melchiorre3, Brahime El Adib6, Baptiste Gault4, Dierk Raabe4, Phillip J Dale3, Susanne Siebentritt3.
Abstract
Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se2 and Cu(In,Ga)3Se5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.Entities:
Year: 2018 PMID: 29483504 PMCID: PMC5827571 DOI: 10.1038/s41467-018-03115-0
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919