| Literature DB >> 29425909 |
Miguel Angel Guevara1, Edwin Iván Cruz Paniagua1, Marisela Hernández González2, Ivett Karina Sandoval Carrillo1, Mayra Linné Almanza Sepúlveda3, Jorge Carlos Hevia Orozco4, Claudia Amezcua Gutiérrez1.
Abstract
Short-term memory and working memory are two closely-related concepts that involve the prefrontal and parietal areas. These two types of memory have been evaluated by means of the spatial span task in its forward and backward conditions, respectively. To determine possible neurofunctional differences between them, this study recorded electroencephalographic activity (EEG) in the frontopolar (Fp1, Fp2), dorsolateral (F3, F4), and parietal (P3 and P4) areas during performance of the forward and backward conditions of this task in young men. The backward condition (an indicator of working memory) was characterized by fewer correct answers, higher absolute power (AP) of the delta band in dorsolateral areas, and a lower correlation between frontopolar and dorsolateral regions in the fast bands (alpha, beta and gamma), mainly in the right hemisphere. The prefrontal EEG changes during backward performance may be associated with the higher attentional demands and inhibition processes required to invert the order of reproduction of a sequence. These data provide evidence that the forward and backward conditions of the spatial span task can be distinguished on the basis of neurofunctional activity and performance, and that each one is associated with a distinct pattern of electrical activity and synchronization between prefrontal areas. The higher AP of the delta band and lower correlation of the fast bands, particularly between right prefrontal areas during the backward condition of this visuospatial task, suggest greater participation by the right prefrontal areas in working memory.Entities:
Keywords: EEG; Parietal area; Prefrontal area; Short-term memory; Visuospatial task; Working memory
Mesh:
Year: 2018 PMID: 29425909 DOI: 10.1016/j.brainres.2018.02.004
Source DB: PubMed Journal: Brain Res ISSN: 0006-8993 Impact factor: 3.252