| Literature DB >> 29389862 |
Tracy M Mattox1, D Keith Coffman2, Inwhan Roh3, Christopher Sims4, Jeffrey J Urban5.
Abstract
Lanthanum hexaboride (LaB₆) has become a material of intense interest in recent years due to its low work function, thermal stability and intriguing optical properties. LaB₆ is also a semiconductor plasmonic material with the ability to support strong plasmon modes. Some of these modes uniquely stretch into the infrared, allowing the material to absorb around 1000 nm, which is of great interest to the window industry. It is well known that the plasmon of LaB₆ can be tuned by controlling particle size and shape. In this work, we explore the options available to further tune the optical properties by describing how metal vacancies and Eu doping concentrations are additional knobs for tuning the absorbance from the near-IR to far-IR in La1-xEuxB₆ (x = 0, 0.2, 0.5, 0.8, and 1.0). We also report that there is a direct correlation between Eu concentration and metal vacancies within the Eu1-xLaxB₆.Entities:
Keywords: LaB6; doping; hexaboride; lanthanum hexaboride; plasmon
Year: 2018 PMID: 29389862 PMCID: PMC5848923 DOI: 10.3390/ma11020226
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Figure 1X-ray diffraction of (A) LaxEu1−xB6; (B) a magnified image of the (2 0 0) diffraction plane with LaxEu1−xB6 where x = 0.0, 0.2, 0.5 and 0.8; (C) Pearson VII peak fit of LaxEu1−xB6 with x = 0.5; and (D) lattice spacing versus atomic % Eu in the LaxEu1−xB6 reaction (calculated using Bragg′s law).
Figure 2(A) View of the EDS map of LaxEu1−xB6 (x = 0.2) including B, La and Eu; (B) atomic % B versus atomic % Eu (the red dashed line is stoichiometric with 1M:6B); (C) measured versus expected % Eu (comparing Eu to La) in LaxEu1−xB6; and (D) metal content (Eu and La) and M void in LaxEu1−xB6.
Figure 3(A) Absorbance of LaxEu1−xB6 changing with Eu content (normalized) and (B) absorbance peak position versus atomic % Eu in LaxEu1−xB6.
Figure 4Localized surface plasmon resonance inferred carrier concentration versus number of free electrons per metal site in LaxEu1−xB6.