| Literature DB >> 29374179 |
Shunpu Li1, Young Tea Chun1, Shuo Zhao2, Hyungju Ahn3, Docheon Ahn3, Jung Inn Sohn4, Yongbing Xu2,5, Pawan Shrestha1, Mike Pivnenko1, Daping Chu6.
Abstract
Electronics based on solution-processable materials are promising for applications in many fields which stimulated enormous research interest in liquid-drying and pattern formation. However, assembling of structure with submicrometre/nanometre resolution through liquid process is very challenging. We show a simple method to rapidly generate polymer structures with deep-submicrometre-sized features over large areas. In this method, a solution film is dried on a substrate under a suspended flexible template with groove/ridge surface topography. Upon solvent evaporation, the solution splits in the grooves and forms capillary bridges between the template and substrate, which are firmly pinned by the edges of the template grooves. This groove pinning stabilizes the contact lines, thereby allowing the formation of fine patterned structures with high aspect ratios which were used to fabricate various functional materials and electronic devices. We also produced secondary self-assembled nano-stripe patterns with resolutions of about 50 nm on the primary lines.Entities:
Year: 2018 PMID: 29374179 PMCID: PMC5786051 DOI: 10.1038/s41467-018-02835-7
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Schematic illustration of the pattern-formation process. The solution is patterned and pinned by the groove corners during drying. Spacer-applied (a→b→c) and spacer-free (a→d→e) configurations can be used to fabricate fine structure through solute transfer to the pinned contact line via capillary flow. For convenience, only half of one ridge and groove is drawn. The molecular alignment and backbone packing with face-on configuration in the generated lines are presented in f
Fig. 2Scanning electron microscopy images of patterned structures. a Line pattern of 2008P, a polymeric semiconductor. b Grid structure composed of sequentially patterned PVP and polystyrene lines. c Fabricated PS lines with about 300 nm resolution and 150 nm feature. d Self-assembled secondary pattern (resolution around 50 nm) on a primary PS line. e, f SEM images of cross sections of patterned PS lines with different feature sizes and schematic drawing to illustrate of how the sample was cleaved and imaged
Fig. 3Performances and images of devices, and molecule structures. a Top-gated FET with n-type P(NDI2OD-T2) wires. b Array of electrochemical transistors with PEDOT:PSS wires. c Electrochemical transistors with PEDOT:PSS wires covered by patterned photoresist for local sensing. d Molecule structures of P(NDI2OD-T2) and PEDOT:PSS polymers
Fig. 4Evaluation of the patterned wires. GI-WAXD results for a spun-cast P(NDI2OD-T2) film (a–c) and patterned P(NDI2OD-T2) wires (d–f). b, c The in-plane and out-of-plane data of the spun-cast sample, respectively, while e and f are the in-plane and out-of-plane data of patterned wires taken in the wire direction. Both devices were annealed at 140 °C for 30 min. Angle dependence of the brightness of patterned P(NDI2OD-T2) lines (g) measured under polarized microscope for samples created using our patterning method (solid circles) and by plasma etching a spin-coated P(NDI2OD-T2) film with PVP lines as a mask (solid diamonds). h, i Birefringence images of wires with different orientations around 45° and 180°, respectively
Fig. 5In situ analysis of drying process. The optical images of the drying of a solution of 2008P semiconducting polymer in DCB under a PDMS template at 2 min (a) and 10 min (b) from sample loading. The black arrow indicates liquid splitting in the grooves of the template, and the red arrow in the inset of a indicates a liquid boundary (partially marked by the dotted line) under a template ridge. The two horizontal lines in the inset of a indicate the PVP spacer used when 2008P lines were created with the spacer-applied configuration. c Optical image showing the de-pinning of the contact line when groove pinning is lost. The white arrow indicates the original contact line between the silicon substrate and 2008P solution bridges. The horizontal lines are the PVP spacers for the patterning of 2008P. The inset of c shows air fronts moving in the grooves during drying in the spacer-applied configuration