| Literature DB >> 29364564 |
Jing Zuo1,2,3, Dapeng Sun3, Langping Tu1, Yanni Wu3, Yinghui Cao4, Bin Xue1, Youlin Zhang1, Yulei Chang1, Xiaomin Liu1, Xianggui Kong1, Wybren Jan Buma3, Evert Jan Meijer3, Hong Zhang1,3.
Abstract
Upconversion emission dynamics have long been believed to be determined by the activator and its interaction with neighboring sensitizers. Herein this assumption is, however, shown to be invalid for nanostructures. We demonstrate that excitation energy migration greatly affects upconversion emission dynamics. "Dopant ions' spatial separation" nanostructures are designed as model systems and the intimate link between the random nature of energy migration and upconversion emission time behavior is unraveled by theoretical modelling and confirmed spectroscopically. Based on this new fundamental insight, we have successfully realized fine control of upconversion emission time behavior (either rise or decay process) by tuning the energy migration paths in various specifically designed nanostructures. This result is significant for applications of this type of materials in super resolution spectroscopy, high-density data storage, anti-counterfeiting, and biological imaging.Entities:
Keywords: Monte Carlo simulation; core-shell nanostructures; energy migration; lanthanides; luminescence dynamics; upconversion nanocrystals
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Year: 2018 PMID: 29364564 PMCID: PMC5887923 DOI: 10.1002/anie.201711606
Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN: 1433-7851 Impact factor: 15.336
Figure 1Schematic diagram of a) the traditional UC mechanism which relies on the monomer (sensitizer) to monomer (activator) sequential energy transfer interactions, and b) the UC process in the DISS nanostructure, in which the three basic processes: photon absorption, energy migration, and UC emission are spatially separated.
Figure 2a) Schematic diagram of the experimental setup for binary pulsed (800 nm and 980 nm) excitation. b) The YbEr@Yb@YbNd UC nanostructure used in the binary pulsed excitation experiment. c) Time‐gap (difference between 800 and 980 nm pulses) dependent UC emission intensity of the YbEr@Yb@YbNd nanoparticles (integrated from 500 nm to 700 nm).
Figure 3a) Schematic representation of the UC process in the YbEr@Yb@Nd DISS nanostructure under 800 nm excitation. b) Typical TEM image (left), expanded area of TEM image (upper right) and Fourier‐transform diffraction patterns (lower right) of the YbEr@Yb@Nd nanostructure. c) The energy migration distance (i.e. middle layer thickness) dependent 540 nm UC emission traces. Solid traces are the experimental results and dotted traces are the simulation results. d) The influence of Yb3+ dopant concentration in the middle layer (ca. 2.5 nm) on the 540 nm UC emission traces.
Figure 4a) Schematic representation of UC processes in YbEr@Yb core/active shell nanostructure under the 980 nm excitation. b) Schematic representation of UC emission trace of YbEr@Yb nanostructure (red line) and its equivalent emission origins (black trace from part I, green trace from part II, and blue trace from part III). Shell thickness dependent 540 nm UC emission traces of the c) core/active shell structures and d) core/inert shell structures. e) 540 nm decay lifetimes (left) and 540 nm UC emission intensities (right) of core/inert shell structures (black curve) and core/active shell structures (red curve).