| Literature DB >> 29356363 |
Yan Chen1,2, Xudong Wang1, Guangjian Wu1, Zhen Wang1,2, Hehai Fang1,2, Tie Lin1, Shuo Sun1, Hong Shen1, Weida Hu1, Jianlu Wang1, Jinglan Sun1, Xiangjian Meng1, Junhao Chu1.
Abstract
Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting devices, and photodiodes. In this work, high-performance photovoltaic photodetectors based on MoTe2 /MoS2 vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>105 ) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W-1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications.Keywords: 2D materials; photodetectors; van der Waals heterostructures
Year: 2018 PMID: 29356363 DOI: 10.1002/smll.201703293
Source DB: PubMed Journal: Small ISSN: 1613-6810 Impact factor: 13.281