Literature DB >> 29351373

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals.

Dawei Li1, Zhiyong Xiao2,3, Sai Mu4, Fei Wang5, Ying Liu1, Jingfeng Song2,3, Xi Huang1, Lijia Jiang1, Jun Xiao1, Lei Liu1, Stephen Ducharme2,3, Bai Cui3,5, Xia Hong2,3, Lan Jiang6, Jean-Francois Silvain7, Yongfeng Lu1.   

Abstract

Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Entities:  

Keywords:  Solid-phase sulfurization; heterojunction; single crystal; sum-frequency generation; transition metal dichalcogenides

Year:  2018        PMID: 29351373     DOI: 10.1021/acs.nanolett.7b05473

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Barrier-assisted vapor phase CVD of large-area MoS2 monolayers with high spatial homogeneity.

Authors:  Santhosh Durairaj; P Krishnamoorthy; Navanya Raveendran; Beo Deul Ryu; Chang-Hee Hong; Tae Hoon Seo; S Chandramohan
Journal:  Nanoscale Adv       Date:  2020-07-09

2.  Polar coupling enabled nonlinear optical filtering at MoS2/ferroelectric heterointerfaces.

Authors:  Dawei Li; Xi Huang; Zhiyong Xiao; Hanying Chen; Le Zhang; Yifei Hao; Jingfeng Song; Ding-Fu Shao; Evgeny Y Tsymbal; Yongfeng Lu; Xia Hong
Journal:  Nat Commun       Date:  2020-03-17       Impact factor: 14.919

3.  Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization.

Authors:  Salvatore E Panasci; Antal Koos; Emanuela Schilirò; Salvatore Di Franco; Giuseppe Greco; Patrick Fiorenza; Fabrizio Roccaforte; Simonpietro Agnello; Marco Cannas; Franco M Gelardi; Attila Sulyok; Miklos Nemeth; Béla Pécz; Filippo Giannazzo
Journal:  Nanomaterials (Basel)       Date:  2022-01-06       Impact factor: 5.076

  3 in total

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