| Literature DB >> 29332398 |
Cédric Bourgès1, Yohan Bouyrie2, Andrew R Supka3, Rabih Al Rahal Al Orabi3, Pierric Lemoine4, Oleg I Lebedev1, Michihiro Ohta2, Koichiro Suekuni5, Vivian Nassif6,7, Vincent Hardy1, Ramzy Daou1, Yuzuru Miyazaki8, Marco Fornari3, Emmanuel Guilmeau1.
Abstract
High-performance thermoelectric bulk sulfide with the colusite structure is achieved by controlling the densification process and forming short-to-medium range structural defects. A simple and powerful way to adjust carrier concentration combined with enhanced phonon scattering through point defects and disordered regions is described. By combining experiments with band structure and phonons calculations, we elucidate, for the first time, the underlying mechanism at the origin of intrinsically low thermal conductivity in colusite samples as well as the effect of S vacancies and antisite defects on the carrier concentration. Our approach provides a controlled and scalable method to engineer high power factors and remarkable figures of merit near the unity in complex bulk sulfide such as Cu26V2Sn6S32 colusites.Entities:
Year: 2018 PMID: 29332398 DOI: 10.1021/jacs.7b11224
Source DB: PubMed Journal: J Am Chem Soc ISSN: 0002-7863 Impact factor: 15.419