Broadband perfect infrared absorption by tuning epsilon-near-zero and epsilon-near-pole resonances of multilayer ITO nanowires.

We numerically investigate the broadband perfect infrared absorption by tuning epsilon-near-zero (ENZ) and epsilon-near-pole (ENP) resonances of multilayer indium tin oxide nanowires (ITO NWs). The monolayer ITO NWs array shows intensive absorption at ENZ and ENP wavelengths for p polarization, while only at the ENP wavelength for s polarization. Moreover, the ENP resonances are almost omnidirectional and the ENZ resonances are angularly dependent. Therefore, the absorption bandwidth is broader for p polarization than that for s polarization when polarized waves are incident obliquely. The ENZ resonances can be tuned by altering the doping concentration and volume filling factor of ITO NWs. However, the ENP resonances only can be tuned by changing the doping concentration of ITO NWs, and volume filling factor impacts little on the ENP resonances. Based on the strong absorption properties of each layer at their own ENP and ENZ resonances, the tuned absorption of the bilayer ITO NWs with the different doping concentrations can be broader and stronger. Furthermore, multilayer ITO NWs can achieve broadband perfect absorption by controlling the doping concentration, volume filling factor, and length of the NWs in each layer. This study has the potential to apply to applications requiring efficient absorption and energy conversion.