Literature DB >> 29327386

Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer.

Yujun Xie1,2, Wanki Kim3, Yerin Kim4, Sangbum Kim3, Jemima Gonsalves3, Matthew BrightSky3, Chung Lam3, Yu Zhu3, Judy J Cha1,2.   

Abstract

Understanding and possibly recovering from the failure mechanisms of phase change memories (PCMs) are critical to improving their cycle life. Extensive electrical testing and postfailure electron microscopy analysis have shown that stuck-set failure can be recovered. Here, self-healing of novel confined PCM devices is directly shown by controlling the electromigration of the phase change material at the nanoscale. In contrast to the current mushroom PCM, the confined PCM has a metallic surfactant layer, which enables effective Joule heating to control the phase change material even in the presence of a large void. In situ transmission electron microscope movies show that the voltage polarity controls the direction of electromigration of the phase change material, which can be used to fill nanoscale voids that form during programing. Surprisingly, a single voltage pulse can induce dramatic migration of antimony (Sb) due to high current density in the PCM device. Based on the finding, self-healing of a large void inside a confined PCM device with a metallic liner is demonstrated for the first time.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  in situ TEM; nanostructure; phase change memory; self-healing

Year:  2018        PMID: 29327386     DOI: 10.1002/adma.201705587

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  3 in total

1.  Designing Conductive-Bridge Phase-Change Memory to Enable Ultralow Programming Power.

Authors:  Zhe Yang; Bowen Li; Jiang-Jing Wang; Xu-Dong Wang; Meng Xu; Hao Tong; Xiaomin Cheng; Lu Lu; Chunlin Jia; Ming Xu; Xiangshui Miao; Wei Zhang; En Ma
Journal:  Adv Sci (Weinh)       Date:  2022-01-14       Impact factor: 16.806

2.  Antimony as a Programmable Element in Integrated Nanophotonics.

Authors:  Samarth Aggarwal; Tara Milne; Nikolaos Farmakidis; Johannes Feldmann; Xuan Li; Yu Shu; Zengguang Cheng; Martin Salinga; Wolfram Hp Pernice; Harish Bhaskaran
Journal:  Nano Lett       Date:  2022-04-22       Impact factor: 12.262

3.  In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5.

Authors:  Sang Ho Oh; Kyungjoon Baek; Sung Kyu Son; Kyung Song; Jang Won Oh; Seung-Joon Jeon; Won Kim; Jong Hee Yoo; Kee Jeung Lee
Journal:  Nanoscale Adv       Date:  2020-05-14
  3 in total

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