Literature DB >> 29318672

Switching Vertical to Horizontal Graphene Growth Using Faraday Cage-Assisted PECVD Approach for High-Performance Transparent Heating Device.

Yue Qi1, Bing Deng1, Xiao Guo2, Shulin Chen3, Jing Gao4, Tianran Li1, Zhipeng Dou3, Haina Ci1, Jingyu Sun5, Zhaolong Chen1, Ruoyu Wang1, Lingzhi Cui1, Xudong Chen1, Ke Chen1, Huihui Wang1, Sheng Wang2, Peng Gao3, Mark H Rummeli6, Hailin Peng1,7, Yanfeng Zhang1,7,8, Zhongfan Liu1,7.   

Abstract

Plasma-enhanced chemical vapor deposition (PECVD) is an applicable route to achieve low-temperature growth of graphene, typically shaped like vertical nanowalls. However, for transparent electronic applications, the rich exposed edges and high specific surface area of vertical graphene (VG) nanowalls can enhance the carrier scattering and light absorption, resulting in high sheet resistance and low transmittance. Thus, the synthesis of laid-down graphene (LG) is imperative. Here, a Faraday cage is designed to switch graphene growth in PECVD from the vertical to the horizontal direction by weakening ion bombardment and shielding electric field. Consequently, laid-down graphene is synthesized on low-softening-point soda-lime glass (6 cm × 10 cm) at ≈580 °C. This is hardly realized through the conventional PECVD or the thermal chemical vapor deposition methods with the necessity of high growth temperature (1000 °C-1600 °C). Laid-down graphene glass has higher transparency, lower sheet resistance, and much improved macroscopic uniformity when compare to its vertical graphene counterpart and it performs better in transparent heating devices. This will inspire the next-generation applications in low-cost transparent electronics.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  Faraday cages; laid-down graphene; plasma-enhanced chemical vapor deposition; vertical graphene

Year:  2018        PMID: 29318672     DOI: 10.1002/adma.201704839

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  4 in total

1.  Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures.

Authors:  Rimantas Gudaitis; Algirdas Lazauskas; Šarūnas Jankauskas; Šarūnas Meškinis
Journal:  Materials (Basel)       Date:  2020-12-10       Impact factor: 3.623

2.  Diamond formation mechanism in chemical vapor deposition.

Authors:  Meiyan Jiang; Chengke Chen; Ping Wang; Difeng Guo; Sijia Han; Xiao Li; Shaohua Lu; Xiaojun Hu
Journal:  Proc Natl Acad Sci U S A       Date:  2022-04-11       Impact factor: 12.779

3.  The direct growth of planar and vertical graphene on Si(100) via microwave plasma chemical vapor deposition: synthesis conditions effects.

Authors:  Š Meškinis; A Vasiliauskas; A Guobienė; M Talaikis; G Niaura; R Gudaitis
Journal:  RSC Adv       Date:  2022-06-28       Impact factor: 4.036

4.  Effect of Substrate Types on the Structure of Vertical Graphene Prepared by Plasma-Enhanced Chemical Vapor Deposition.

Authors:  Siyi Xie; Junjie Huang; Yufeng Zhang; Weiwei Cai; Xueao Zhang
Journal:  Nanomaterials (Basel)       Date:  2021-05-12       Impact factor: 5.076

  4 in total

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