| Literature DB >> 29300484 |
Hyejin Ryu1,2, Yi Chen3, Heejung Kim4, Hsin-Zon Tsai3, Shujie Tang1,5, Juan Jiang1, Franklin Liou3, Salman Kahn3, Caihong Jia3,6, Arash A Omrani3, Ji Hoon Shim4,7, Zahid Hussain1, Zhi-Xun Shen5,8, Kyoo Kim2,4, Byung Il Min4, Choongyu Hwang9, Michael F Crommie3,10,11, Sung-Kwan Mo1.
Abstract
We present the electronic characterization of single-layer 1H-TaSe2 grown by molecular beam epitaxy using a combined angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory calculations. We demonstrate that 3 × 3 charge-density-wave (CDW) order persists despite distinct changes in the low energy electronic structure highlighted by the reduction in the number of bands crossing the Fermi energy and the corresponding modification of Fermi surface topology. Enhanced spin-orbit coupling and lattice distortion in the single-layer play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the two-dimensional limit.Entities:
Keywords: 2D materials; ARPES; CDW; MBE; STM; TaSe2; Transition metal dichalcogenides; charge density wave
Year: 2018 PMID: 29300484 DOI: 10.1021/acs.nanolett.7b03264
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189