Literature DB >> 29289189

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices.

Krishna Dayal Shukla1, Nishant Saxena1, Anbarasu Manivannan1.   

Abstract

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

Year:  2017        PMID: 29289189     DOI: 10.1063/1.4999522

Source DB:  PubMed          Journal:  Rev Sci Instrum        ISSN: 0034-6748            Impact factor:   1.523


  2 in total

1.  Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices.

Authors:  Nishant Saxena; Christoph Persch; Matthias Wuttig; Anbarasu Manivannan
Journal:  Sci Rep       Date:  2019-12-17       Impact factor: 4.379

2.  A scheme for enabling the ultimate speed of threshold switching in phase change memory devices.

Authors:  Nishant Saxena; Rajamani Raghunathan; Anbarasu Manivannan
Journal:  Sci Rep       Date:  2021-03-17       Impact factor: 4.379

  2 in total

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