Literature DB >> 29286451

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication.

Chong-Rong Wu1, Tung-Wei Chu2, Kuan-Chao Chen1, Shih-Yen Lin3.   

Abstract

We have demonstrated that through the sulfurization of transition metal films such as molybdenum (Mo) and tungsten (W), large-area and uniform transition metal dichalcogenides (TMDs) MoS2 and WS2 can be prepared on sapphire substrates. By controlling the metal film thicknesses, good layer number controllability, down to a single layer of TMDs, can be obtained using this growth technique. Based on the results obtained from the Mo film sulfurized under the sulfur deficient condition, there are two mechanisms of (a) planar MoS2 growth and (b) Mo oxide segregation observed during the sulfurization procedure. When the background sulfur is sufficient, planar TMD growth is the dominant growth mechanism, which will result in a uniform MoS2 film after the sulfurization procedure. If the background sulfur is deficient, Mo oxide segregation will be the dominant growth mechanism at the initial stage of the sulfurization procedure. In this case, the sample with Mo oxide clusters covered with few-layer MoS2 will be obtained. After sequential Mo deposition/sulfurization and W deposition/sulfurization procedures, vertical WS2/MoS2 hetero-structures are established using this growth technique. Raman peaks corresponding to WS2 and MoS2, respectively, and the identical layer number of the hetero-structure with the summation of individual 2D materials have confirmed the successful establishment of the vertical 2D crystal hetero-structure. After transferring the WS2/MoS2 film onto a SiO2/Si substrate with pre-patterned source/drain electrodes, a bottom-gate transistor is fabricated. Compared with the transistor with only MoS2 channels, the higher drain currents of the device with the WS2/MoS2 hetero-structure have exhibited that with the introduction of 2D crystal hetero-structures, superior device performance can be obtained. The results have revealed the potential of this growth technique for the practical application of 2D crystals.

Entities:  

Mesh:

Substances:

Year:  2017        PMID: 29286451      PMCID: PMC5755506          DOI: 10.3791/56494

Source DB:  PubMed          Journal:  J Vis Exp        ISSN: 1940-087X            Impact factor:   1.355


  15 in total

1.  Anomalous lattice vibrations of single- and few-layer MoS2.

Authors:  Changgu Lee; Hugen Yan; Louis E Brus; Tony F Heinz; James Hone; Sunmin Ryu
Journal:  ACS Nano       Date:  2010-05-25       Impact factor: 15.881

2.  Single-layer MoS2 transistors.

Authors:  B Radisavljevic; A Radenovic; J Brivio; V Giacometti; A Kis
Journal:  Nat Nanotechnol       Date:  2011-01-30       Impact factor: 39.213

3.  High-yield production and transfer of graphene flakes obtained by anodic bonding.

Authors:  Thomas Moldt; Axel Eckmann; Philipp Klar; Sergey V Morozov; Alexander A Zhukov; Kostya S Novoselov; Cinzia Casiraghi
Journal:  ACS Nano       Date:  2011-09-13       Impact factor: 15.881

4.  Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth.

Authors:  Chong-Rong Wu; Xiang-Rui Chang; Tung-Wei Chu; Hsuan-An Chen; Chao-Hsin Wu; Shih-Yen Lin
Journal:  Nano Lett       Date:  2016-10-24       Impact factor: 11.189

5.  Channel length scaling of MoS2 MOSFETs.

Authors:  Han Liu; Adam T Neal; Peide D Ye
Journal:  ACS Nano       Date:  2012-09-12       Impact factor: 15.881

6.  High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared.

Authors:  Woong Choi; Mi Yeon Cho; Aniruddha Konar; Jong Hak Lee; Gi-Beom Cha; Soon Cheol Hong; Sangsig Kim; Jeongyong Kim; Debdeep Jena; Jinsoo Joo; Sunkook Kim
Journal:  Adv Mater       Date:  2012-08-20       Impact factor: 30.849

7.  Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor.

Authors:  Youngbin Lee; Jinhwan Lee; Hunyoung Bark; Il-Kwon Oh; Gyeong Hee Ryu; Zonghoon Lee; Hyungjun Kim; Jeong Ho Cho; Jong-Hyun Ahn; Changgu Lee
Journal:  Nanoscale       Date:  2014-01-27       Impact factor: 7.790

8.  NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface.

Authors:  Ming-Yang Li; Yumeng Shi; Chia-Chin Cheng; Li-Syuan Lu; Yung-Chang Lin; Hao-Lin Tang; Meng-Lin Tsai; Chih-Wei Chu; Kung-Hwa Wei; Jr-Hau He; Wen-Hao Chang; Kazu Suenaga; Lain-Jong Li
Journal:  Science       Date:  2015-07-30       Impact factor: 47.728

9.  Role of the seeding promoter in MoS2 growth by chemical vapor deposition.

Authors:  Xi Ling; Yi-Hsien Lee; Yuxuan Lin; Wenjing Fang; Lili Yu; Mildred S Dresselhaus; Jing Kong
Journal:  Nano Lett       Date:  2014-01-29       Impact factor: 11.189

10.  Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films.

Authors:  Yifei Yu; Chun Li; Yi Liu; Liqin Su; Yong Zhang; Linyou Cao
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.