| Literature DB >> 29273764 |
Chuanjun Li1,2, Shengya He3, Hannes Engelhardt4, Tongjun Zhan3, Weidong Xuan3, Xi Li3, Yunbo Zhong3, Zhongming Ren3, Markus Rettenmayr4.
Abstract
For applying an alternating magnetic field (AMF) in materials processing it is of high significance to understand the physical mechanisms behind the change in diffusivity in the AMF. In this work, the effect of the AMF on interdiffusion in a Ni-Cr alloy was investigated with a diffusion couple. The interdiffusion coefficient was found to increase with increasing AMF intensity. The faster diffusivity is a consequence of the enhancement of the dislocation density in the diffusion couples that was confirmed by the broadening of X-ray diffraction peaks. The higher dislocation density is attributed to the magnetoplastic effect (MPE). Theoretical considerations on the relation of MPE, dislocation density and diffusivity are in agreement with the experimental results.Entities:
Year: 2017 PMID: 29273764 PMCID: PMC5741770 DOI: 10.1038/s41598-017-18500-w
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Concentration profiles in diffusion couples annealed for 32 h at 1100 °C (a) and interdiffusion coefficients for different AMF intensities (b). The origin x = 0 is the position of the Boltzmann-Matano plane.
Figure 2Logarithm of interdiffusion coefficients in the Ni-Cr alloy vs. reciprocal absolute temperature at different AMF intensities. The R-squared values for linear fitting also are given.
Comparison of frequency factors D 0 and activation energies Q in this work and experimental data from literature.
| AMF(T) |
|
| Remark |
|---|---|---|---|
| 0 | 1.4 × 10−8 | 173 | This work |
| 3.0 × 10−7 | 192 | ref.[ | |
| 9.4 × 10−6 | 266 | ref.[ | |
| 5.2 × 10−4 | 289 | ref.[ | |
| 0.05 | 4.0 × 10−8 | 181 | This work |
| 0.1 | 3.2 × 10−8 | 174 | This work |
Figure 3Diffraction peaks of the (311) reflection in diffusion couples annealed at 1100 °C with and without an AMF of 0.1 T.
Figure 4Theoretical and experimental relative diffusion coefficients at 1000 °C in the AMF. The following parameters are used: r = 0.5 nm, H 0 = 0.093 T. The inset displays the variation of D R with AMF intensity according to equation (1).
Figure 5Schematic diagram of experimental apparatus for diffusion in the AMF.