| Literature DB >> 29259222 |
Sourav Dutta1, Odysseas Zografos2,3, Surya Gurunarayanan2,3, Iuliana Radu2, Bart Soree2,3,4, Francky Catthoor2, Azad Naeemi5.
Abstract
Surface-plasmon-polariton waves propagating at the interface between a metal and a dielectric, hold the key to future high-bandwidth, dense on-chip integrated logic circuits overcoming the diffraction limitation of photonics. While recent advances in plasmonic logic have witnessed the demonstration of basic and universal logic gates, these CMOS oriented digital logic gates cannot fully utilize the expressive power of this novel technology. Here, we aim at unraveling the true potential of plasmonics by exploiting an enhanced native functionality - the majority voter. Contrary to the state-of-the-art plasmonic logic devices, we use the phase of the wave instead of the intensity as the state or computational variable. We propose and demonstrate, via numerical simulations, a comprehensive scheme for building a nanoscale cascadable plasmonic majority logic gate along with a novel referencing scheme that can directly translate the information encoded in the amplitude and phase of the wave into electric field intensity at the output. Our MIM-based 3-input majority gate displays a highly improved overall area of only 0.636 μm2 for a single-stage compared with previous works on plasmonic logic. The proposed device demonstrates non-Boolean computational capability and can find direct utility in highly parallel real-time signal processing applications like pattern recognition.Entities:
Year: 2017 PMID: 29259222 PMCID: PMC5736723 DOI: 10.1038/s41598-017-17954-2
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1(a) Schematic of the metal-slot MIM plasmonic waveguide consisting of Ag on top of SiO2 substrate and a dielectric of 1.5 refractive index, acting as a channel for transmission of information. (b) Calculated dispersion relation of the slot waveguide for gap widths of 60, 120 and 180 nm. (c) Fundamental plasmonic mode in a 60 nm wide metal-slot waveguide at λ 0 = 1.55 μm. (d) Two dimensional figure of merit (FOM) graph as a function of the wavelength λ 0 illustrating for our exploration space a good trade-off between the propagation and confinement at the chosen excitation wavelength of λ 0 = 1.55 μm (e) Plot showing coupling length L as a function of the waveguide pitch p for gap widths of 60, 120 and 180 nm, illustrating the trade-off between crosstalk and on-chip packing density.
Figure 2(a, b) Illustration of a single stage 3-input plasmonic majority logic gate. (c) Simulation result for a 3-input plasmonic majority gate for 23 input combinations in terms of the time-domain electric field component EY at the output, normalized to the total source electric field and integrated over the cross-section of the output waveguide. (d) Calculated peak values of the normalized integrated electric field component EY at the output for different combinations of the input phases. (e) Time-lapse simulation results in terms of the distribution of EY in the x-y plane showing the propagation and interference of the SPP waves.
Figure 3(a) Illustration of a 2-stage cascaded plasmonic majority logic gate. (b) Simulation results for the 10 representative input phase combinations in terms of the time-domain electric field component EY at the output, normalized to the total source electric field and integrated over the cross-section of the output waveguide. (c) Calculated peak values of the normalized integrated electric field component EY at the output for different combinations of the input phases. (d) Time-lapse simulation results in terms of the distribution of EY in the x-y plane showing the propagation and interference of the SPP waves.
Figure 4(a) Illustration of a 2-stage cascaded plasmonic majority logic gate with the reference signal. (b) Simulation results for the 10 representative input phase combinations in terms of the time-domain electric field component EY at the output, normalized to the total source electric field and integrated over the cross-section of the output waveguide. (c) Calculated peak values of the normalized integrated electric field component EY at the output for different combinations of the input phases. The peak amplitude of the output electric field in (c) for the case when only the reference signal is present is defined as the threshold level. (d) Time-lapse simulation results in terms of the distribution of EY in the x-y plane showing the propagation and interference of the SPP waves.
Figure 5(a) Illustration of a multi-stage cascaded plasmonic majority logic. (b) Plot showing the range of amplitude of the output electric field EY for logic 1 and 0 obtained at the end of each stage. The range of output decreases due to propagation loss at each stage. (c) Resolution, defined as the difference between the minimum value of peak output EY for logic 1 and the maximum value of peak output EY for logic 0 (case of weakest majority outputs), as a function of the number of stages.