Literature DB >> 29255223

Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics.

Sreetosh Goswami, Adam J Matula, Santi P Rath, Svante Hedström, Surajit Saha, Meenakshi Annamalai, Debabrata Sengupta, Abhijeet Patra, Siddhartha Ghosh, Hariom Jani, Soumya Sarkar, Mallikarjuna Rao Motapothula, Christian A Nijhuis, Jens Martin, Sreebrata Goswami, Victor S Batista, T Venkatesan.   

Abstract

This corrects the article DOI: 10.1038/nmat5009.

Entities:  

Year:  2017        PMID: 29255223     DOI: 10.1038/nmat5059

Source DB:  PubMed          Journal:  Nat Mater        ISSN: 1476-1122            Impact factor:   43.841


  1 in total

1.  Robust resistive memory devices using solution-processable metal-coordinated azo aromatics.

Authors:  Sreetosh Goswami; Adam J Matula; Santi P Rath; Svante Hedström; Surajit Saha; Meenakshi Annamalai; Debabrata Sengupta; Abhijeet Patra; Siddhartha Ghosh; Hariom Jani; Soumya Sarkar; Mallikarjuna Rao Motapothula; Christian A Nijhuis; Jens Martin; Sreebrata Goswami; Victor S Batista; T Venkatesan
Journal:  Nat Mater       Date:  2017-10-23       Impact factor: 43.841

  1 in total

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