| Literature DB >> 29216136 |
O V Chefonov, A V Ovchinnikov, S A Romashevskiy, X Chai, T Ozaki, A B Savel'ev, M B Agranat, V E Fortov.
Abstract
The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7×1016 cm-3) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm-1 and a pulse duration of 700 fs. A huge transmittance enhancement of ∼90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5-3.1 MV cm-1.Entities:
Year: 2017 PMID： 29216136 DOI： 10.1364/OL.42.004889
Source DB: PubMed Journal: Opt Lett ISSN： 0146-9592 Impact factor: 3.776