| Literature DB >> 29182851 |
Bo Peng1, Qi Li1, Xiao Liang1, Peng Song2, Jian Li1, Keliang He3, Deyi Fu2, Yue Li1, Chao Shen4, Hailong Wang4, Chuangtang Wang1, Tao Liu5, Li Zhang1, Haipeng Lu1, Xin Wang1, Jianhua Zhao4, Jianliang Xie1, Mingzhong Wu5, Lei Bi1, Longjiang Deng1, Kian Ping Loh2.
Abstract
Manipulation of spin degree of freedom (DOF) of electrons is the fundamental aspect of spintronic and valleytronic devices. Two-dimensional transition metal dichalcogenides (2D TMDCs) exhibit an emerging valley pseudospin, in which spin-up (-down) electrons are distributed in a +K (-K) valley. This valley polarization gives a DOF for spintronic and valleytronic devices. Recently, magnetic exchange interactions between graphene and magnetic insulator yttrium iron garnet (YIG) have been exploited. However, the physics of 2D TMDCs with YIG have not been shown before. Here we demonstrate strong many-body effects in a heterostructure geometry comprising a MoS2 monolayer and YIG. High-order trions are directly identified by mapping absorption and photoluminescence at 12 K. The electron doping density is up to ∼1013 cm-2, resulting in a large splitting of ∼40 meV between trions and excitons. The trions exhibit a high circular polarization of ∼80% under optical pumping by circularly polarized light at ∼1.96 eV; it is confirmed experimentally that both phonon scattering and electron-hole exchange interaction contribute to the valley depolarization with temperature; importantly, a magnetoresistance (MR) behavior in the MoS2 monolayer was observed, and a giant MR ratio of ∼30% is achieved, which is 1 order of magnitude larger than the reported ratio in MoS2/CoFe2O4 heterostructures. Our experimental results confirm that the giant MR behaviors are attributed to the interfacial spin accumulation due to YIG substrates. Our work provides an insight into spin manipulation in a heterostructure of monolayer materials and magnetic substrates.Entities:
Keywords: 2D materials; magnetic heterostructures; spintronics; valley polarization; valleytronics
Year: 2017 PMID: 29182851 DOI: 10.1021/acsnano.7b05743
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881