| Literature DB >> 29167479 |
Ro-Ya Liu1, Yu Ogawa1, Peng Chen2, Kenichi Ozawa3, Takeshi Suzuki1, Masaru Okada1, Takashi Someya1, Yukiaki Ishida1, Kozo Okazaki1, Shik Shin1, Tai-Chang Chiang4,5, Iwao Matsuda6.
Abstract
Time-dependent responses of materials to an ultrashort optical pulse carry valuable information about the electronic and lattice dynamics; this research area has been widely studied on novel two-dimensional materials such as graphene, transition metal dichalcogenides (TMDs) and topological insulators (TIs). We report herein a time-resolved and angle-resolved photoemission spectroscopy (TRARPES) study of WSe2, a layered semiconductor of interest for valley electronics. The results for below-gap optical pumping reveal energy-gain and -loss Floquet replica valence bands that appear instantaneously in concert with the pump pulse. Energy shift, broadening, and complex intensity variation and oscillation at twice the phonon frequency for the valence bands are observed at time scales ranging from the femtosecond to the picosecond and beyond. The underlying physics is rich, including ponderomotive interaction, dressing of the electronic states, creation of coherent phonon pairs, and diffusion of charge carriers - effects operating at vastly different time domains.Entities:
Year: 2017 PMID: 29167479 PMCID: PMC5700159 DOI: 10.1038/s41598-017-16076-z
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Crystal structure, Brillouin zone, and electronic structure of WSe2. (a) Top and side views of the atomic structure of 2H-WSe2. (b) First Brillouin zone and its planar projection. (c) X-ray photoemission spectroscopy data taken from a cleaved WSe2 crystal using 1200-eV photons. (d) Bulk band structure obtained by DFT calculations[11].
Figure 2TRARPES maps of WSe2 along −. (a) ARPES map without pump. (b–d) ARPES maps with pump on for pump-probe delay time Δt = −0.5, 0 and 0.5 ps, respectively. (e) Difference map obtained by subtracting the Δt = −0.5 ps reference map from the Δt = 0 map. (f) Difference map obtained by subtracting the Δt = −0.5 ps reference map from the Δt = 0.5 ps map. (g) EDC at for Δt = 0. The inset highlights the n = +1 replica bands, where the blue curve is a fit.
Figure 3TRARPES data processing to highlight time-dependent evolution. (a) ARPES map for Δt = −0.5 ps. The white dashed curve shows the energy dispersion of band VB1, arbitrarily shifted, as a reference. (b) ARPES map for Δt = −0.5 ps shifted by the VB1 dispersion; the VB1 dispersion after the shift becomes a horizontal line. (c) EAEDCs for Δt = −0.5 and 0.5 ps obtained by integrating the data over the region in k space marked by the two orange dashed vertical lines in b. (d) Difference EAEDC obtained by subtracting the Δt = −0.5 ps EAEDC from the Δt = +0.5 ps EAEDC in (c).
Figure 4Energy shift, broadening, and intensity variation of the valence bands for various delay times. (a) Energy shift (ΔE), (b) broadening (ΔW), (c) normalized intensity variation (ΔI) of the VBs near deduced from fitting of EAEDCs for various delay times. (d) Another set of data of ΔI taken with a much finer time resolution. (e) Square of the fast Fourier transform (FFT) of ΔI in (d) as a function of frequency. (f) Square of the phonon density of states (PDOS)[21] as a function of frequency as a measure of the joint density of states of coherent phonon pairs. The frequency scale here is one half of that in e to facilitate a comparison of peak positions in (e) and (f) that should be related by a factor two difference because of phonon pairing.