Literature DB >> 29164881

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation.

Jing Liang1, Jin Zhang2, Zhenzhu Li3, Hao Hong1, Jinhuan Wang1, Zhihong Zhang1, Xu Zhou1, Ruixi Qiao1, Jiyu Xu2, Peng Gao1, Zhirong Liu3, Zhongfan Liu3, Zhipei Sun4, Sheng Meng2, Kaihui Liu1, Dapeng Yu1,5.   

Abstract

Strain serves as a powerful freedom to effectively, reversibly, and continuously engineer the physical and chemical properties of two-dimensional (2D) materials, such as bandgap, phase diagram, and reaction activity. Although there is a high demand for full characterization of the strain vector at local points, it is still very challenging to measure the local strain amplitude and its direction. Here, we report a novel approach to monitor the local strain vector in 2D molybdenum diselenide (MoSe2) by polarization-dependent optical second-harmonic generation (SHG). The strain amplitude can be evaluated from the SHG intensity in a sensitive way (-49% relative change per 1% strain); while the strain direction can be directly indicated by the evolution of polarization-dependent SHG pattern. In addition, we employ this technique to investigate the interlayer locking effect in 2H MoSe2 bilayers when the bottom layer is under stretching but the top layer is free. Our observation, combined with ab initio calculations, demonstrates that the noncovalent interlayer interaction in 2H MoSe2 bilayers is strong enough to transfer the strain of at least 1.4% between the bottom and top layers to prevent interlayer sliding. Our results establish that SHG is an effective approach for in situ, sensitive, and noninvasive measurement of local strain vector in noncentrosymmetric 2D materials.

Entities:  

Keywords:  2D materials; MoSe2; second-harmonic generation; strain

Year:  2017        PMID: 29164881     DOI: 10.1021/acs.nanolett.7b03476

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  7 in total

1.  Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles.

Authors:  Mengying Liu; Weijie Li; Dan Cheng; Xuan Fang; Hongbin Zhao; Dengkui Wang; Jinhua Li; Yingjiao Zhai; Jie Fan; Haizhu Wang; Xiaohua Wang; Dan Fang; Xiaohui Ma
Journal:  RSC Adv       Date:  2022-05-13       Impact factor: 4.036

2.  Engineered 2D materials for optical bioimaging and path toward therapy and tissue engineering.

Authors:  Jeewan C Ranasinghe; Arpit Jain; Wenjing Wu; Kunyan Zhang; Ziyang Wang; Shengxi Huang
Journal:  J Mater Res       Date:  2022-05-20       Impact factor: 2.909

3.  Probing interlayer shear thermal deformation in atomically-thin van der Waals layered materials.

Authors:  Le Zhang; Han Wang; Xinrong Zong; Yongheng Zhou; Taihong Wang; Lin Wang; Xiaolong Chen
Journal:  Nat Commun       Date:  2022-07-09       Impact factor: 17.694

4.  Mechanical and electronic properties of boron nitride nanosheets with graphene domains under strain.

Authors:  J S Lima; I S Oliveira; S Azevedo; A Freitas; C G Bezerra; L D Machado
Journal:  RSC Adv       Date:  2021-10-29       Impact factor: 4.036

5.  Wavelength and pulse duration tunable ultrafast fiber laser mode-locked with carbon nanotubes.

Authors:  Diao Li; Henri Jussila; Yadong Wang; Guohua Hu; Tom Albrow-Owen; Richard C T Howe; Zhaoyu Ren; Jintao Bai; Tawfique Hasan; Zhipei Sun
Journal:  Sci Rep       Date:  2018-02-09       Impact factor: 4.379

Review 6.  Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering.

Authors:  Yalan Yan; Shuang Ding; Xiaonan Wu; Jian Zhu; Dengman Feng; Xiaodong Yang; Fangfei Li
Journal:  RSC Adv       Date:  2020-10-27       Impact factor: 4.036

7.  Second-harmonic generation enhancement in monolayer transition-metal dichalcogenides by using an epsilon-near-zero substrate.

Authors:  Pilar G Vianna; Aline Dos S Almeida; Rodrigo M Gerosa; Dario A Bahamon; Christiano J S de Matos
Journal:  Nanoscale Adv       Date:  2020-11-13
  7 in total

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