| Literature DB >> 29143770 |
Jelle E Stumpel1,2, Marco Saccone3, Valentina Dichiarante4, Ossi Lehtonen5, Matti Virkki6, Pierangelo Metrangolo7,8, Arri Priimagi9.
Abstract
In recent years, supramolecular complexes comprising a poly(4-vinylpyridine) backbone and azobenzene-based halogen bond donors have emerged as a promising class of materials for the inscription of light-induced surface-relief gratings (SRGs). The studies up to date have focused on building supramolecular hierarchies, i.e., optimizing the polymer-azobenzene noncovalent interaction for efficient surface patterning. They have been conducted using systems with relatively low azobenzene content, and little is known about the concentration dependence of SRG formation in halogen-bonded polymer-azobenzene complexes. Herein, we bridge this gap, and study the concentration dependence of SRG formation using two halogen-bond-donating azobenzene derivatives, one functionalized with a tetrafluoroiodophenyl and the other with an iodoethynylphenyl group. Both have been previously identified as efficient molecules in driving the SRG formation. We cover a broad concentration range, starting from 10 mol % azobenzene content and going all the way up to equimolar degree of complexation. The complexes are studied as spin-coated thin films, and analyzed by optical microscopy, atomic force microscopy, and optical diffraction arising during the SRG formation. We obtained diffraction efficiencies as high as 35%, and modulation depths close to 400 nm, which are significantly higher than the values previously reported for halogen-bonded polymer-azobenzene complexes.Entities:
Keywords: azobenzene; halogen bonding; photoresponsive; supramolecular; surface-relief grating
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Year: 2017 PMID: 29143770 PMCID: PMC6150214 DOI: 10.3390/molecules22111844
Source DB: PubMed Journal: Molecules ISSN: 1420-3049 Impact factor: 4.411
Figure 1Chemical structures of the halogen-bond-accepting polymer (P4VP) and the halogen-bond-donating azobenzene derivatives (Molecules 1 and 2) used in this work.
Summary of the SRG experiments, including the thicknesses of the films used, the diffraction efficiencies, and the modulation depths of the gratings (with an error margin of ±15 nm) as determined from the AFM images. The measurements were performed after completion of the SRG formation, which occurred between 1 and 2 h depending on the sample.
| Sample | Film Thickness | Diffraction Efficiency | Modulation Depth |
|---|---|---|---|
| P4VP( | 380 nm | 0.14 | 180 nm |
| P4VP( | 300 nm | 0.23 | 245 nm |
| P4VP( | 263 nm | 0.30 | 315 nm |
| P4VP( | 223 nm | 0.34 | 315 nm |
| P4VP( | 397 nm | 0.22 | 330 nm |
| P4VP( | 407 nm | 0.28 | 360 nm |
| P4VP( | 278 nm | 0.29 | 390 nm |
| P4VP( | (330 nm) 1 | 0.35 | (125 nm) 1 |
1 Values could not be measured in an accurate manner due to the phase separation.
Figure 2Optical microscope images (magnification 10×) of thin films of the halogen-bonded (a) P4VP(1) and (b) P4VP(2) complexes, with complexation degrees x equaling to 0.1, 0.2, 0.5, and 1.0. Phase separation was clearly observed at high complexation degrees, especially for the 2-containing samples. The scale bar represents 100 μm.
Figure 3Absorption spectra of thin films of halogen-bonded (a) P4VP(1) and (b) P4VP(2) complexes with complexation degree x = 0.1, 0.2, 0.5, and 1.0. The data has been normalized to match with a thickness of 400 nm.
Figure 4Development of first order diffraction efficiencies during SRG formation with a writing beam irradiation intensity of 300 mW·cm−2 (488 nm) for (a) P4VP(1) and (b) P4VP(2); and (c) the normalized diffraction efficiencies (0–1800 s) during SRG formation for the samples with nominal complexation degree x = 0.2.
Figure 5(a) 3D AFM image of P4VP(2)0.1 after 2 h of SRG inscription; (b) cross-section profiles of the SRGs on P4VP(1)0.1, P4VP(1)0.2, and P4VP(1)0.5.