| Literature DB >> 29129058 |
Shelley A Scott1, Christoph Deneke2,3,4, Deborah M Paskiewicz1, Hyuk Ju Ryu1, Angelo Malachias5, Stefan Baunack3, Oliver G Schmidt3, Donald E Savage1, Mark A Eriksson1, Max G Lagally1.
Abstract
Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.Entities:
Keywords: epitaxy; hybrid crystalline materials; interfaces; selective growth; silicon nanomembranes; strain engineering
Year: 2017 PMID: 29129058 DOI: 10.1021/acsami.7b14291
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229