Literature DB >> 29129058

Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States.

Shelley A Scott1, Christoph Deneke2,3,4, Deborah M Paskiewicz1, Hyuk Ju Ryu1, Angelo Malachias5, Stefan Baunack3, Oliver G Schmidt3, Donald E Savage1, Mark A Eriksson1, Max G Lagally1.   

Abstract

Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.

Entities:  

Keywords:  epitaxy; hybrid crystalline materials; interfaces; selective growth; silicon nanomembranes; strain engineering

Year:  2017        PMID: 29129058     DOI: 10.1021/acsami.7b14291

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  1 in total

1.  Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate.

Authors:  Kejia Wang; Yuzi Song; Yichun Zhang; Yunyan Zhang; Zhiyuan Cheng
Journal:  Nanoscale Res Lett       Date:  2022-10-15       Impact factor: 5.418

  1 in total

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