| Literature DB >> 29111744 |
Jin Su1, Tsutomu Minegishi1,2, Yosuke Kageshima1, Hiroyuki Kobayashi3,4, Takashi Hisatomi1, Tomohiro Higashi1, Masao Katayama1, Kazunari Domen1.
Abstract
This study investigated the properties of a photoanode fabricated by depositing a p-type CdTe thin film on a CdS-coated FTO substrate (CdTe/CdS/FTO) via close-space sublimation. This CdTe/CdS/FTO electrode was found to work as a photoanode with a long absorption edge wavelength of 830 nm. In a CdTe-based photoanode such as this, the p-n junction formed at the CdTe/CdS interface promotes charge separation of photoexcited carriers and forces photogenerated holes to move toward the photoanode surface to promote oxidation reactions on the electrode surface. A MoOx buffer layer was also found to play a crucial role in facilitating the transfer of photogenerated holes to surface reaction sites through decreasing the energy barrier at the interface between the CdTe and a surface protective layer. A biphotoelectrode photoelectrochemical cell composed of a CdTe-based photoanode and a CdTe-based photocathode exhibited a solar-to-hydrogen conversion efficiency of 0.22% without an external voltage in response to illumination by AM 1.5G light.Entities:
Year: 2017 PMID: 29111744 DOI: 10.1021/acs.jpclett.7b02526
Source DB: PubMed Journal: J Phys Chem Lett ISSN: 1948-7185 Impact factor: 6.475