| Literature DB >> 29085078 |
Shi Tang1,2, Andreas Sandström1,2, Petter Lundberg1, Thomas Lanz1, Christian Larsen1,2, Stephan van Reenen3, Martijn Kemerink3, Ludvig Edman4,5.
Abstract
The light-emitting electrochemical cell promises cost-efficient, large-area emissive applications, as its characteristic in-situ doping enables use of air-stabile electrodes and a solution-processed single-layer active material. However, mutual exclusion of high efficiency and high brightness has proven a seemingly fundamental problem. Here we present a generic approach that overcomes this critical issue, and report on devices equipped with air-stabile electrodes and outcoupling structure that deliver a record-high efficiency of 99.2 cd A-1 at a bright luminance of 1910 cd m-2. This device significantly outperforms the corresponding optimized organic light-emitting diode despite the latter employing calcium as the cathode. The key to this achievement is the design of the host-guest active material, in which tailored traps suppress exciton diffusion and quenching in the central recombination zone, allowing efficient triplet emission. Simultaneously, the traps do not significantly hamper electron and hole transport, as essentially all traps in the transport regions are filled by doping.Entities:
Year: 2017 PMID: 29085078 PMCID: PMC5662711 DOI: 10.1038/s41467-017-01339-0
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Schematics and steady-state simulation profiles of host–guest light-emitting electrochemical cells. Schematics of the designed host–guest LEC a at open circuit and b during steady-state operation, with the energy levels of the host and guest indicated by the solid and dashed lines, respectively, and the symbols identified in panel c. d The simulated steady-state concentration and voltage profiles for a symmetric host–guest LEC. The same device with e a deepened electron-trap level or f a decreased electron mobility in the host. The insets present the calculated quantum efficiency, assuming 100% photoluminescence quantum efficiency of the guest emitter and perfect outcoupling
Fig. 2Cyclic voltammetry (CV) and optical measurements of device materials. a–d CV traces recorded on thin films of the different host and guest constituents, with the corresponding chemical structure displayed in the right inset. e CV for the THABF4 electrolyte (solid line) and a TMPE-OH:LiCF3SO3 electrolyte (dashed line). f The electron-energy levels of the host and guest materials, as extracted from the CV data. The (dotted) LUMO level of PVK could not be measured with CV, and was instead estimated from the absorption data. g The triplet energies of the host and guest compounds. h The absorption spectrum of the guest compound (solid black line) and the PL spectra of the three host materials
Fig. 3Device performance of host–guest light-emitting electrochemical cells. The temporal optoelectronic response of ITO/PEDOT:PSS/Host:Ir(R-ppy)3: Electrolyte/Al LECs with the host and electrolyte selection defined in the panels a–d. All devices featured identical host:guest:electrolyte mass stoichiometry, active-material thickness (130 nm), and drive current density (j = 7.7 mA cm−2)
Fig. 4Device optimization and large-area fabrication. a The measured current efficacy (solid black squares) and power conversion efficacy (open red circles) as a function of the current density for the host–guest LEC, with a guest concentration of 29% and with the PVK:OXD-7 blend host. b The current efficacy (left) and external quantum efficiency (right) as a function of guest concentration for the ITO/PEDOT:PSS/PVK:OXD-7:Ir(R-ppy)3:THABF4/Al LEC (solid black squares) and a ITO/PEDOT:PSS/PVK:OXD-7:Ir(R-ppy)3/Ca/Al OLED (open red circles). The devices featured the same active-material thickness (130 nm) and were driven by j = 7.7 mA cm−2. c The simulated steady-state concentration profiles for a host–guest OLED, with realistic injection barriers for electrons (0.2 eV) and holes (0.5 eV). d The simulated steady-state concentration profiles for a host–guest LEC with an injection barrier of 1 eV for both electron and hole injection. Both devices feature symmetric trap depths and mobilities, and the symbols are identified in Fig. 1c. e The initial evolution of the luminance (left axis) and the current efficacy (right axis) of pristine ITO/PEDOT:PSS/PVK:OXD-7:Ir(R-ppy)3:THABF4/Al LECs featuring a thin film comprising a hexagonal array of hemispherical microlenses (MLA-LEC, open circles) or a glass half sphere (GHS-LEC, solid squares) as the outcoupling structure. Both LECs were driven by a current density of j = 1.9 mA cm−2. f The uniform green light-emission from a 45 cm2 large-area host–guest LEC fabricated by spray-sintering under ambient air. Inset: photograph depicting the airbrush performing spray-sintering deposition