| Literature DB >> 29068560 |
Moon Kee Choi1,2, Jiwoong Yang1,2, Dong Chan Kim1,2, Zhaohe Dai3, Junhee Kim1,2, Hyojin Seung1,2, Vinayak S Kale1,2, Sae Jin Sung4, Chong Rae Park4, Nanshu Lu3, Taeghwan Hyeon1,2, Dae-Hyeong Kim1,2.
Abstract
Displaying information on transparent screens offers new opportunities in next-generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such "see-through" displays to show vivid images over clear background view. Here transparent quantum dot light-emitting diodes (Tr-QLEDs) are reported with high brightness (bottom: ≈43 000 cd m-2 , top: ≈30 000 cd m-2 , total: ≈73 000 cd m-2 at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr-QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr-QLEDs (513 pixels in.-1 ) shows the potential of the full-color transparent display.Entities:
Keywords: light-emitting diodes; quantum dots; transparent displays; ultrathin electronics; wearable electronics
Year: 2017 PMID: 29068560 DOI: 10.1002/adma.201703279
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849