Literature DB >> 29058429

Manipulating Ferroelectrics through Changes in Surface and Interface Properties.

Nina Balke1, Ramamoorthy Ramesh2, Pu Yu3,4.   

Abstract

Ferroelectric materials are used in many applications of modern technologies including information storage, transducers, sensors, tunable capacitors, and other novel device concepts. In many of these applications, the ferroelectric properties, such as switching voltages, piezoelectric constants, or stability of nanodomains, are crucial. For any application, even for material characterization, the material itself needs to be interfaced with electrodes. On the basis of the structural, chemical, and electronic properties of the interfaces, the measured material properties can be determined by the interface. This is also true for surfaces. However, the importance of interfaces and surfaces and their effect on experiments are often neglected, which results in many dramatically different experimental results for nominally identical samples. Therefore, it is crucial to understand the role of the interface and surface properties on internal bias fields and the domain switching process. Here, the nanoscale ferroelectric switching process and the stability of nanodomains for Pb(Zr,Ti)O3 thin films are investigated by using scanning probe microscopy. Interface and surface properties are modulated through the selection/redesign of electrode materials as well as tuning the surface-near oxygen vacancies, which both can result in changes of the electric fields acting across the sample, and consequently this controls the measured ferroelectric and domain retention properties. By understanding the role of surfaces and interfaces, ferroelectric properties can be tuned to eliminate the problem of asymmetric domain stability by combining the effects of different electrode materials. This study forms an important step toward integrating ferroelectric materials in electronic devices.

Entities:  

Keywords:  electrode interface; ferroelectrics; nanodomains; oxygen vacancies; retention; scanning probe microscopy

Year:  2017        PMID: 29058429     DOI: 10.1021/acsami.7b10747

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  3 in total

1.  Non-volatile optical switch of resistance in photoferroelectric tunnel junctions.

Authors:  Xiao Long; Huan Tan; Florencio Sánchez; Ignasi Fina; Josep Fontcuberta
Journal:  Nat Commun       Date:  2021-01-15       Impact factor: 14.919

2.  Controlling polarization direction in epitaxial Pb(Zr0.2Ti0.8)O3 films through Nb (n-type) and Fe (p-type) doping.

Authors:  Cristina Florentina Chirila; Viorica Stancu; Georgia Andra Boni; Iuliana Pasuk; Lucian Trupina; Lucian Dragos Filip; Cristian Radu; Ioana Pintilie; Lucian Pintilie
Journal:  Sci Rep       Date:  2022-01-14       Impact factor: 4.379

3.  Superior polarization retention through engineered domain wall pinning.

Authors:  Dawei Zhang; Daniel Sando; Pankaj Sharma; Xuan Cheng; Fan Ji; Vivasha Govinden; Matthew Weyland; Valanoor Nagarajan; Jan Seidel
Journal:  Nat Commun       Date:  2020-01-17       Impact factor: 14.919

  3 in total

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