Literature DB >> 29044252

Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex.

Jian-Hong Tang1, Tian-Ge Sun, Jiang-Yang Shao, Zhong-Liang Gong, Yu-Wu Zhong.   

Abstract

The ITO/active material/Au sandwiched devices of a cobalt(ii) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (>103) and low operating voltages (<±3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.

Entities:  

Year:  2017        PMID: 29044252     DOI: 10.1039/c7cc05806c

Source DB:  PubMed          Journal:  Chem Commun (Camb)        ISSN: 1359-7345            Impact factor:   6.222


  2 in total

1.  Self-Assembly of Supramolecular Fractals from Generation 1 to 5.

Authors:  Lei Wang; Ran Liu; Jiali Gu; Bo Song; Heng Wang; Xin Jiang; Keren Zhang; Xin Han; Xin-Qi Hao; Shi Bai; Ming Wang; Xiaohong Li; Bingqian Xu; Xiaopeng Li
Journal:  J Am Chem Soc       Date:  2018-10-05       Impact factor: 15.419

2.  A Terpyridine-Fe2+-Based Coordination Polymer Film for On-Chip Micro-Supercapacitor with AC Line-Filtering Performance.

Authors:  Hongxing Wang; Feng Qiu; Chenbao Lu; Jinhui Zhu; Changchun Ke; Sheng Han; Xiaodong Zhuang
Journal:  Polymers (Basel)       Date:  2021-03-24       Impact factor: 4.329

  2 in total

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